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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuz'menkov, A. M. Nadtochiy, V. N. Nevedomskiy, V. V. Andryushkin, S. S. Rochas, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, A. Yu. Egorov, V. E. Bugrov, “Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 2008–2017   |
| 2. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, N. A. Maleev, A. G. Kuz'menkov, A. P. Vasil'ev, S. S. Rochas, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky, A. G. Gladyshev, D. V. Denisov, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, “Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021), 3–7 |
| 3. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, N. A. Maleev, A. G. Kuz'menkov, A. P. Vasil'ev, S. S. Rochas, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky, A. G. Gladyshev, D. V. Denisov, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, “Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021), 3–8 |
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2020 |
| 4. |
S. A. Blokhin, V. N. Nevedomskiy, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, S. S. Rochas, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, V. M. Ustinov, “1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1088–1096 ; Semiconductors, 54:10 (2020), 1276–1283 |
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| 5. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. P. Vasil'ev, A. G. Kuz'menkov, N. A. Maleev, S. S. Rochas, A. G. Gladyshev, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, V. M. Ustinov, “The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 49–54 ; Tech. Phys. Lett., 46:12 (2020), 1257–1262 |
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| 6. |
S. S. Rochas, I. I. Novikov, A. G. Gladyshev, E. S. Kolodeznyi, A. V. Babichev, V. V. Andryushkin, V. N. Nevedomskiy, D. V. Denisov, L. Ya. Karachinsky, A. Yu. Egorov, V. E. Bugrov, “The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 27–30 ; Tech. Phys. Lett., 46:11 (2020), 1128–1131 |
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| 7. |
S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. A. Blokhin, A. G. Kuz'menkov, A. P. Vasil'ev, S. S. Rochas, A. G. Gladyshev, A. V. Babichev, I. I. Novikov, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, V. M. Ustinov, “A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 21–25 ; Tech. Phys. Lett., 46:9 (2020), 854–858 |
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2019 |
| 8. |
L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, Yu. K. Bobretsova, A. A. Klimov, D. V. Denisov, K. O. Voropaev, A. S. Ionov, V. E. Bugrov, A. Yu. Egorov, “Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice”, Optics and Spectroscopy, 127:6 (2019), 963–966 ; Optics and Spectroscopy, 127:6 (2019), 1053–1056 |
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| 9. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, N. A. Maleev, V. M. Ustinov, E. S. Kolodeznyi, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, “Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique”, Optics and Spectroscopy, 127:1 (2019), 145–149 ; Optics and Spectroscopy, 127:1 (2019), 140–144 |
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| 10. |
S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, N. A. Maleev, V. M. Ustinov, E. S. Kolodeznyi, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, “Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1128–1134 ; Semiconductors, 53:8 (2019), 1104–1109 |
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| 11. |
M. V. Maksimov, Yu. M. Shernyakov, F. I. Zubov, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, S. S. Rochas, E. S. Kolodeznyi, A. Yu. Egorov, A. E. Zhukov, “Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019), 20–23 ; Tech. Phys. Lett., 45:6 (2019), 549–552 |
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2018 |
| 12. |
E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, Yu. K. Bobretsova, A. A. Klimov, S. A. Blokhin, K. O. Voropaev, A. S. Ionov, “Optical gain of 1550-nm range multiple-quantum-well heterostructures and limiting modulation frequencies of vertical-cavity surface-emitting lasers based on them”, Optics and Spectroscopy, 125:2 (2018), 229–233 ; Optics and Spectroscopy, 125:2 (2018), 238–242 |
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| 13. |
E. S. Kolodeznyi, A. S. Kurochkin, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, A. V. Savel'ev, A. Yu. Egorov, D. V. Denisov, “On the impact of barrier-layer doping on the photoluminescence efficiency of InGaAlAs/InGaAs/InP strained-layer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1034–1037 ; Semiconductors, 52:9 (2018), 1156–1159 |
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