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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev, “GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters”, Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1727–1731   |
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2020 |
| 2. |
M. A. Sukhanov, A. K. Bakarov, D. Yu. Protasov, K. S. Zhuravlev, “AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 3–6 ; Tech. Phys. Lett., 46:2 (2020), 154–157 |
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2019 |
| 3. |
T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu. Protasov, A. S. Kozhukhov, B. Ya. Ber, D. Yu. Kazantsev, V. G. Mansurov, K. S. Zhuravlev, “Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019), 21–24 ; Tech. Phys. Lett., 45:8 (2019), 761–764 |
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2018 |
| 4. |
D. Yu. Protasov, A. K. Bakarov, A. I. Toropov, B. Ya. Ber, D. Yu. Kazantsev, K. S. Zhuravlev, “Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 48–56 ; Semiconductors, 52:1 (2018), 44–52 |
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| 5. |
D. Yu. Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, E. V. Erofeev, K. S. Zhuravlev, “Increasing saturated electron-drift velocity in donor–acceptor doped phemt heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018), 77–84 ; Tech. Phys. Lett., 44:3 (2018), 260–262 |
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2017 |
| 6. |
D. Yu. Protasov, A. K. Bakarov, A. I. Toropov, B. Ya. Ber, D. Yu. Kazantsev, K. S. Zhuravlev, “Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1696 ; Semiconductors, 52:1 (2018), 44–52 |
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