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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths
D. Yu. Protasovab, A. K. Bakarovac, A. I. Toropovac, B. Ya. Berd, D. Yu. Kazantsevd, K. S. Zhuravlevac a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University
d Ioffe Institute, St. Petersburg
Abstract:
The effect of the silicon-atom distribution profile in donor $\delta$-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the $\delta$-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation $\sigma$ of the $\delta$-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in $\sigma$ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm$^2$/(V s) at 77 K and 600 cm$^2$/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing $\sigma$ of the $\delta$-layer profile.
Received: 12.04.2017 Accepted: 24.04.2017
Citation:
D. Yu. Protasov, A. K. Bakarov, A. I. Toropov, B. Ya. Ber, D. Yu. Kazantsev, K. S. Zhuravlev, “Mobility of the two-dimensional electron gas in DA-$p$HEMT heterostructures with various $\delta$–$n$-layer profile widths”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 48–56; Semiconductors, 52:1 (2018), 44–52
Linking options:
https://www.mathnet.ru/eng/phts5940 https://www.mathnet.ru/eng/phts/v52/i1/p48
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