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This article is cited in 3 scientific papers (total in 3 papers)
AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy
M. A. Sukhanovab, A. K. Bakarovab, D. Yu. Protasovac, K. S. Zhuravlevab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
Abstract:
A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a $pin$ structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.
Keywords:
InSb, nBn detector, dark current, molecular-beam epitaxy, IR photodetector.
Received: 30.09.2019 Revised: 30.10.2019 Accepted: 31.10.2019
Citation:
M. A. Sukhanov, A. K. Bakarov, D. Yu. Protasov, K. S. Zhuravlev, “AlInSb/InSb heterostructures for IR photodetectors grown by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 3–6; Tech. Phys. Lett., 46:2 (2020), 154–157
Linking options:
https://www.mathnet.ru/eng/pjtf5177 https://www.mathnet.ru/eng/pjtf/v46/i4/p3
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