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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. A. Antonov, D. O. Filatov, A. S. Novikov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1474–1478   |
| 2. |
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov, “Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26 |
| 3. |
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 30–32 ; Tech. Phys. Lett., 47:7 (2021), 539–541 |
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2020 |
| 4. |
S. V. Tikhov, V. G. Shengurov, S. A. Denisov, I. N. Antonov, A. V. Kruglov, A. I. Belov, D. O. Filatov, O. N. Gorshkov, A. N. Mikhaylov, “Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749 ; Tech. Phys., 65:10 (2020), 1668–1676 |
| 5. |
O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov, “Resistive switching in memristors based on Ag/Ge/Si heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46 ; Tech. Phys. Lett., 46:1 (2020), 91–93 |
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2019 |
| 6. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “Submonolayer InGaAs/GaAs quantum dots grown by MOCVD”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1159–1163 ; Semiconductors, 53:8 (2019), 1138–1142 |
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| 7. |
N. V. Baidus, V. A. Kukushkin, S. M. Nekorkin, A. V. Kruglov, D. G. Reunov, “MOS-hydride epitaxy growth of InGaAs/GaAs submonolayer quantum dots for the excitation of surface plasmon–polaritons”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 345–350 ; Semiconductors, 53:3 (2019), 326–331 |
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