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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Sushkov, D. A. Pavlov, A. I. Andrianov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, N. V. Baidus, D. V. Yurasov, A. V. Rykov, “Comparison of À$^{\mathrm{III}}$Â$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 978–988   |
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2020 |
| 2. |
S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov, “Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 298–304 ; Tech. Phys., 65:2 (2020), 284–290 |
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| 3. |
A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, E. A. Pitirimova, “Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1129–1133 ; Semiconductors, 54:10 (2020), 1332–1335 |
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2019 |
| 4. |
A. A. Sushkov, D. A. Pavlov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, N. V. Baidus, A. V. Rykov, R. N. Kriukov, “Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1271–1274 ; Semiconductors, 53:9 (2019), 1242–1245 |
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| 5. |
S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, S. Yu. Zubkov, R. N. Kriukov, A. V. Nezhdanov, D. A. Pavlov, I. Yu. Pashen'kin, A. A. Sushkov, “On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1233–1236 ; Semiconductors, 53:9 (2019), 1207–1210 |
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2017 |
| 6. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
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