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This article is cited in 2 scientific papers (total in 2 papers)
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020
Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition
A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, E. A. Pitirimova Lobachevsky State University of Nizhny Novgorod
Abstract:
Ge/Si buffer layers grown at different temperatures on Si/SiO$_{2}$/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO$_{2}$/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO$_{2}$/Si (100).
Keywords:
heteroepitaxy, transmission electron microscopy, molecular beam epitaxy, hot wire chemical vapor-phase deposition, silicon-on-insulator.
Received: 15.04.2020 Revised: 21.04.2020 Accepted: 21.04.2020
Citation:
A. A. Sushkov, D. A. Pavlov, S. A. Denisov, V. Yu. Chalkov, R. N. Kriukov, E. A. Pitirimova, “Growth of a ge layer on a Si/SiO$_{2}$/Si (100) structure by the hot wire chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1129–1133; Semiconductors, 54:10 (2020), 1332–1335
Linking options:
https://www.mathnet.ru/eng/phts5149 https://www.mathnet.ru/eng/phts/v54/i10/p1129
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