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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. I. Okhapkin, S. A. Kraev, E. A. Arkhipova, V. M. Daniltsev, O. I. Khrykin, P. A. Yunin, M. N. Drozdov, “Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 837–840   ; Semiconductors, 55:11 (2021), 865–868 |
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2018 |
| 2. |
Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin, “Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1380–1383 ; Semiconductors, 52:11 (2018), 1491–1494 |
| 3. |
P. A. Yunin, Yu. N. Drozdov, O. I. Khrykin, V. A. Grigoryev, “Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1300–1303 ; Semiconductors, 52:11 (2018), 1412–1415 |
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2017 |
| 4. |
A. I. Okhapkin, S. Korolev, P. A. Yunin, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, V. I. Shashkin, “Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1503–1506 ; Semiconductors, 51:11 (2017), 1449–1452 |
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| 5. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, J. E. Batler, “Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron””, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1151 ; Semiconductors, 51:8 (2017), 1106 |
| 6. |
M. N. Drozdov, V. M. Daniltsev, Yu. N. Drozdov, O. I. Khrykin, P. A. Yunin, “Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017), 50–59 ; Tech. Phys. Lett., 43:5 (2017), 477–480 |
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2016 |
| 7. |
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1595–1598 ; Semiconductors, 50:12 (2016), 1569–1573 |
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| 8. |
D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorokhodov, M. V. Shaleev, M. N. Drozdov, O. I. Khrykin, O. A. Buzanov, V. V. Alenkov, P. I. Folomin, A. B. Gritsenko, “Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1532–1536 ; Semiconductors, 50:11 (2016), 1511–1514 |
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