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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. I. Okhapkin, S. A. Kraev, E. A. Arkhipova, V. M. Daniltsev, O. I. Khrykin, P. A. Yunin, M. N. Drozdov, “Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 837–840   ; Semiconductors, 55:11 (2021), 865–868 |
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2020 |
| 2. |
Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov, “Features of the vapor-phase epitaxy of GaAs on nonplanar substrates”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 958–961 ; Semiconductors, 54:9 (2020), 1147–1149 |
| 3. |
A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin, “Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 865–867 ; Semiconductors, 54:9 (2020), 1056–1058 |
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| 4. |
P. A. Yunin, A. I. Okhapkin, M. N. Drozdov, S. A. Korolev, E. A. Arkhipova, S. A. Kraev, Yu. N. Drozdov, V. I. Shashkin, D. B. Radishev, “Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 855–858 ; Semiconductors, 54:9 (2020), 1047–1050 |
| 5. |
M. N. Drozdov, Yu. N. Drozdov, A. I. Okhapkin, P. A. Yunin, O. A. Streletskii, A. E. Ieshkin, “SIMS analysis of carbon-containing materials: content of carbon atoms in $sp^{2}$ and $sp^{3}$ hybridization states”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 38–42 ; Tech. Phys. Lett., 46:3 (2020), 290–294 |
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2019 |
| 6. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin, “Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1229–1232 ; Semiconductors, 53:9 (2019), 1203–1206 |
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| 7. |
M. N. Drozdov, Yu. N. Drozdov, A. I. Okhapkin, S. A. Kraev, M. A. Lobaev, “A new approach to tof-sims analysis of the phase composition of carbon-containing materials”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019), 50–54 ; Tech. Phys. Lett., 45:1 (2019), 48–52 |
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2018 |
| 8. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin, “Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1362–1365 ; Semiconductors, 52:11 (2018), 1473–1476 |
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2017 |
| 9. |
A. I. Okhapkin, S. Korolev, P. A. Yunin, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, V. I. Shashkin, “Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1503–1506 ; Semiconductors, 51:11 (2017), 1449–1452 |
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