|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, E. A. Tarasova, N. V. Vostokov, V. A. Kozlov, S. V. Obolensky, “Modeling the response of a microwave low-barrier uncooled Mott diode to the action of heavy ions of outer space and femtosecond laser pulses”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 743–747   ; Semiconductors, 55:10 (2021), 780–784 |
| 2. |
A. S. Puzanov, V. V. Bibikova, I. Yu. Zabavichev, E. S. Obolenskaya, E. A. Tarasova, N. V. Vostokov, S. V. Obolensky, “Simulation of the response of a low-barrier Mott diode to the influence of heavy charged particles from outer space”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 51–54 ; Tech. Phys. Lett., 47:4 (2021), 305–308 |
1
|
|
2020 |
| 3. |
I. Yu. Zabavichev, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Impact of the potential of scattering at radiation-induced defects on carrier transport in GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 945–951 ; Semiconductors, 54:9 (2020), 1134–1140 |
|
2019 |
| 4. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Simulation of the formation of a cascade of displacements and transient ionization processes in silicon semiconductor structures under neutron exposure”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1279–1284 ; Semiconductors, 53:9 (2019), 1249–1254 |
6
|
|
2017 |
| 5. |
I. Yu. Zabavichev, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1520–1524 ; Semiconductors, 51:11 (2017), 1466–1471 |
2
|
| 6. |
I. Yu. Zabavichev, E. S. Obolenskaya, A. A. Potekhin, A. S. Puzanov, S. V. Obolensky, V. A. Kozlov, “Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1489–1492 ; Semiconductors, 51:11 (2017), 1435–1438 |
4
|
|
| Organisations |
|
| |
|
|
Contact us: