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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev, “High efficiency (EQE = 37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1218–1222   |
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N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov, “InGaAsP/InP photovoltaic converters for narrowband radiation”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1091–1094 |
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V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, M. V. Nakhimovich, M. Z. Shvarts, “GaSb-based thermophotovoltaic converters of IR selective emitter radiation”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 956–959 ; Semiconductors, 55:11 (2021), 840–843 |
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A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Yu. Soldatenkov, M. Z. Shvarts, V. M. Andreev, “Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 699–703 ; Semiconductors, 55:8 (2021), 686–690 |
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R. A. Salii, M. A. Mintairov, S. A. Mintairov, M. V. Nakhimovich, M. Z. Shvarts, N. A. Kalyuzhnyy, “Investigation of the photoelectric characteristics of GaAs solar cells with different InGaAs quantum dot array positioning in the $i$-region”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 28–31 |
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M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Increasing the efficiency of triple-junction solar cells due to the metamorphic InGaAs subcell”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 51–54 |
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S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, N. A. Kalyuzhnyy, “Increasing the efficiency of 520- to 540-nm laser radiation photovoltaic converters based on GaInP/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 29–31 ; Tech. Phys. Lett., 47:4 (2021), 290–292 |
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2020 |
| 8. |
V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, “Effects of doping of bragg reflector layers on the electrical characteristics of InGaAs/GaAs metamorphic photovoltaic converters”, Fizika i Tekhnika Poluprovodnikov, 54:4 (2020), 400–407 ; Semiconductors, 54:4 (2020), 476–483 |
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S. A. Mintairov, I. M. Gadzhiev, N. A. Kalyuzhnyy, M. V. Maksimov, A. M. Nadtochiy, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts, A. E. Zhukov, “High-speed photodetectors for the 950–1100 nm optical range based on In$_{0.4}$Ga$_{0.6}$As/GaAs quantum well-dot nanostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 11–14 ; Tech. Phys. Lett., 46:12 (2020), 1219–1222 |
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