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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, T. P. Samsonova, O. I. Kon'kov, “High-voltage 4$H$-SiC based avalanche diodes with a negative beve”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 349–353   ; Semiconductors, 55:4 (2021), 405–409 |
| 2. |
P. A. Ivanov, N. M. Lebedeva, “TCAD simulation of high-voltage 4$H$-SiC diodes with an edge semi-insulating region”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 201–206 ; Semiconductors, 55:2 (2021), 256–261 |
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| 3. |
P. A. Ivanov, N. M. Lebedeva, N. D. Il'inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon'kov, Yu. M. Zadiranov, “High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 188–194 ; Semiconductors, 55:2 (2021), 243–249 |
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| 4. |
P. A. Ivanov, M. F. Kudoyarov, N. M. Lebedeva, N. D. Il'inskaya, T. P. Samsonova, “High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021), 48–50 ; Tech. Phys. Lett., 47:3 (2021), 275–277 |
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2020 |
| 5. |
P. A. Ivanov, A. S. Potapov, N. M. Lebedeva, I. V. Grekhov, “Avalanche breakdown in 4$H$-SiC Schottky diodes: reliability aspects”, Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020), 2133–2138 ; Tech. Phys., 65:12 (2020), 2041–2046 |
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| 6. |
N. M. Lebedeva, T. P. Samsonova, N. D. Il'inskaya, S. I. Troshkov, P. A. Ivanov, “Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask”, Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020), 997–1000 ; Tech. Phys., 65:6 (2020), 957–960 |
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| 7. |
N. M. Lebedeva, N. D. Il'inskaya, P. A. Ivanov, “Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 207–211 ; Semiconductors, 54:2 (2020), 258–262 |
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| 8. |
N. D. Il'inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon'kov, A. S. Potapov, “Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 97–102 ; Semiconductors, 54:1 (2020), 144–149 |
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