TCAD simulation of high-voltage 4$H$-SiC diodes with an edge semi-insulating region

The TCAD simulation of high-voltage 4$H$-SiC-based $p^{+}$–$n$–$n^{+}$ diodes with an edge semi-insulating $i$-type region created via the complete compensation for doping donors in the $n$ region by deep carrier traps (the energy position of the traps in the 4$H$-SiC band gap is 1.2 eV below the bottom of the conduction band) is performed. It is shown that the efficiency of the edge semi-insulating $i$-type region at room temperature is close to 100%: the avalanche breakdown voltage of the $p^{+}$–$n$–$n^{+}$ diode with the edge $i$ region is 1100 V, a value equal to the breakdown voltage of an idealized diode with a one-dimensional $p^{+}$–$n$–$n^{+}$ structure. The efficiency of the $i$-type region as the edge region gradually deteriorates with an increase in temperature above 600 K due to the thermal emission of electrons captured at the traps. The results obtained are briefly discussed in view of the practical application of radiation technology for the formation of edge semi-insulating $i$ regions in 4$H$-SiC devices.