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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov, “Current–voltage characteristics of power diode structures with strong asymmetry of emitters injection ability”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 524–532   ; Semiconductors, 55 (2021), s22–s29 |
| 2. |
A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov, “High-power Schottky diodes with a negative-differential-resistance portion in the I–V characteristic”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 75–82 ; Semiconductors, 55:1 (2021), 92–99 |
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2020 |
| 3. |
A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov, “S-shaped I – V characteristics of high-power Schottky diodes at high current densities”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 470–477 ; Semiconductors, 54:5 (2020), 567–574 |
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| 4. |
S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev, “Multidimensional $dU/dt$ effect in high-power thyristors”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 69–73 ; Semiconductors, 54:1 (2020), 112–116 |
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2018 |
| 5. |
S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev, “Theoretical analysis of the effect of $dU/dt$ in 4H–SiC thyristor structures”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1544–1550 ; Tech. Phys., 63:10 (2018), 1497–1503 |
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2017 |
| 6. |
T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteĭn, S. N. Yurkov, J. W. Palmour, “Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1125–1130 ; Semiconductors, 51:8 (2017), 1081–1086 |
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| 7. |
S. N. Yurkov, T. T. Ìnatsakanov, M. E. Levinshteĭn, A. G. Tandoev, J. W. Palmour, “Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 234–239 ; Semiconductors, 51:2 (2017), 225–231 |
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2016 |
| 8. |
M. E. Levinshteĭn, T. T. Ìnatsakanov, S. N. Yurkov, A. G. Tandoev, Sei-Hyung Ryu, J. W. Palmour, “High-voltage silicon-carbide thyristor with an $n$-type blocking base”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 408–414 ; Semiconductors, 50:3 (2016), 404–410 |
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