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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1125–1130
DOI: https://doi.org/10.21883/FTP.2017.08.44801.8478 (Mi phts6081) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor physics

Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers

T. T. Ìnatsakanova, A. G. Tandoeva, M. E. Levinshteĭnb, S. N. Yurkova, J. W. Palmourc

a Russian Electrotechnical Institute Named after V. I. Lenin, Moscow, Russia
b Ioffe Institute, St. Petersburg
c Wolfspeed, Cree Company, USA
Full-text PDF (173 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2017.08.44801.8478
Abstract: An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
Received: 30.01.2017
Accepted: 15.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1081–1086
DOI: https://doi.org/10.1134/S1063782617080231
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. T. Ìnatsakanov, A. G. Tandoev, M. E. Levinshteǐn, S. N. Yurkov, J. W. Palmour, “Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1125–1130; Semiconductors, 51:8 (2017), 1081–1086
Citation in format AMSBIB
\Bibitem{ÌnaTanLev17}
\by T.~T.~Ìnatsakanov, A.~G.~Tandoev, M.~E.~Levinshte{\v\i}n, S.~N.~Yurkov, J.~W.~Palmour
\paper Current--voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1125--1130
\mathnet{http://mi.mathnet.ru/phts6081}
\crossref{https://doi.org/10.21883/FTP.2017.08.44801.8478}
\elib{https://elibrary.ru/item.asp?id=29938294}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1081--1086
\crossref{https://doi.org/10.1134/S1063782617080231}
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  • https://www.mathnet.ru/eng/phts/v51/i8/p1125
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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