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This article is cited in 1 scientific paper (total in 1 paper)
Solid-State Electronics
Theoretical analysis of the effect of $dU/dt$ in 4H–SiC thyristor structures
S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev Moscow Power Engineering Institute, Moscow, Russia
Abstract:
On the basis of numerical simulation, specificities of the effect of $dU/dt$ in 4H–SiC thyristor structures, related to realization of the recently discovered triggering $\alpha$-mechanism are analyzed. It is shown that one of the manifestations of this mechanism is a catastrophic reduction in the voltage blocked by a thyristor with an increase in temperature of the structure. Practical ways of eliminating this effect are discussed.
Keywords:
Thyristor Structure, Ohmic Leakage, Pulse Front Duration, Critical Charge, Technological Shunts.
Received: 24.10.2017 Revised: 26.03.2018
Citation:
S. N. Yurkov, T. T. Ìnatsakanov, A. G. Tandoev, “Theoretical analysis of the effect of $dU/dt$ in 4H–SiC thyristor structures”, Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018), 1544–1550; Tech. Phys., 63:10 (2018), 1497–1503
Linking options:
https://www.mathnet.ru/eng/jtf5798 https://www.mathnet.ru/eng/jtf/v88/i10/p1544
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