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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 5, Pages 470–477
DOI: https://doi.org/10.21883/FTP.2020.05.49264.9339 (Mi phts5232) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

S-shaped I – V characteristics of high-power Schottky diodes at high current densities

A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov

National Research University "Moscow Power Engineering Institute"
Full-text PDF (166 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.05.49264.9339
Abstract: The effect of a set of quasi-neutral regimes of carrier transport in semiconductors, including, along with diffusion and drift, recently discovered diffusion stimulated by quasi-neutral drift, on the characteristics of structures is successively taken into account. The order of change in the carrier transport regimes in Schottky-diode structures is investigated and the features in the I – V characteristics caused by this change are established. The results of analytical study of these features are confirmed using numerical simulation.
Keywords: carrier transport in semiconductors, high-power Schottky diodes, I–V characteristic, carrier transport regimes.
Received: 24.12.2019
Revised: 28.12.2019
Accepted: 30.12.2019
English version:
Semiconductors, 2020, Volume 54, Issue 5, Pages 567–574
DOI: https://doi.org/10.1134/S1063782620050152
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Tandoev, T. T. Ìnatsakanov, S. N. Yurkov, “S-shaped I – V characteristics of high-power Schottky diodes at high current densities”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 470–477; Semiconductors, 54:5 (2020), 567–574
Citation in format AMSBIB
\Bibitem{TanÌnaYur20}
\by A.~G.~Tandoev, T.~T.~Ìnatsakanov, S.~N.~Yurkov
\paper S-shaped I -- V characteristics of high-power Schottky diodes at high current densities
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 5
\pages 470--477
\mathnet{http://mi.mathnet.ru/phts5232}
\crossref{https://doi.org/10.21883/FTP.2020.05.49264.9339}
\elib{https://elibrary.ru/item.asp?id=42906060}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 5
\pages 567--574
\crossref{https://doi.org/10.1134/S1063782620050152}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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