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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. I. Okhapkin, S. A. Kraev, E. A. Arkhipova, V. M. Daniltsev, O. I. Khrykin, P. A. Yunin, M. N. Drozdov, “Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 837–840   ; Semiconductors, 55:11 (2021), 865–868 |
| 2. |
A. L. Vikharev, S. A. Bogdanov, N. M. Ovechkin, O. A. Ivanov, D. B. Radishev, A. M. Gorbachev, M. A. Lobaev, A. Ya. Vul', A. T. Dideikin, S. A. Kraev, S. A. Korolev, “Study of undoped nanocrystalline diamond films grown by microwave plasma-assisted chemical vapor deposition”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 49–58 ; Semiconductors, 55:1 (2021), 66–75 |
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2020 |
| 3. |
Yu. N. Drozdov, S. A. Kraev, A. I. Okhapkin, V. M. Daniltsev, E. V. Skorokhodov, “Features of the vapor-phase epitaxy of GaAs on nonplanar substrates”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 958–961 ; Semiconductors, 54:9 (2020), 1147–1149 |
| 4. |
A. I. Okhapkin, P. A. Yunin, E. A. Arkhipova, S. A. Kraev, S. A. Korolev, M. N. Drozdov, V. I. Shashkin, “Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 865–867 ; Semiconductors, 54:9 (2020), 1056–1058 |
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| 5. |
P. A. Yunin, A. I. Okhapkin, M. N. Drozdov, S. A. Korolev, E. A. Arkhipova, S. A. Kraev, Yu. N. Drozdov, V. I. Shashkin, D. B. Radishev, “Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 855–858 ; Semiconductors, 54:9 (2020), 1047–1050 |
| 6. |
M. N. Drozdov, E. A. Arkhipova, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, A. E. Parafin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “The use of pulsed laser annealing to form ohmic Mo/Ti contacts to diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020), 34–38 ; Tech. Phys. Lett., 46:6 (2020), 551–555 |
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2019 |
| 7. |
M. N. Drozdov, E. V. Demidov, Yu. N. Drozdov, S. A. Kraev, V. I. Shashkin, E. A. Arkhipova, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Formation of low-resistivity Au/Mo/Ti ohmic contacts to $p$-diamond epitaxial layers”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1923–1932 ; Tech. Phys., 64:12 (2019), 1827–1836 |
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| 8. |
E. A. Arkhipova, E. V. Demidov, M. N. Drozdov, S. A. Kraev, V. I. Shashkin, M. A. Lobaev, A. L. Vikharev, A. M. Gorbachev, D. B. Radishev, V. A. Isaev, S. A. Bogdanov, “Ohmic contacts to CVD diamond with boron-doped $\delta$ layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1386–1390 ; Semiconductors, 53:10 (2019), 1348–1352 |
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| 9. |
N. V. Vostokov, V. M. Daniltsev, S. A. Kraev, V. L. Kryukov, E. V. Skorokhodov, S. S. Strelchenko, V. I. Shashkin, “Vertical field-effect transistor with control $p$–$n$-junction based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1311–1314 ; Semiconductors, 53:10 (2019), 1279–1281 |
| 10. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. Korolev, S. A. Kraev, E. A. Arkhipova, E. V. Skorokhodov, P. A. Bushuikin, V. I. Shashkin, “Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1229–1232 ; Semiconductors, 53:9 (2019), 1203–1206 |
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| 11. |
M. N. Drozdov, Yu. N. Drozdov, A. I. Okhapkin, S. A. Kraev, M. A. Lobaev, “A new approach to tof-sims analysis of the phase composition of carbon-containing materials”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:2 (2019), 50–54 ; Tech. Phys. Lett., 45:1 (2019), 48–52 |
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2018 |
| 12. |
A. I. Okhapkin, P. A. Yunin, M. N. Drozdov, S. A. Kraev, E. V. Skorokhodov, V. I. Shashkin, “Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1362–1365 ; Semiconductors, 52:11 (2018), 1473–1476 |
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2017 |
| 13. |
A. I. Okhapkin, S. Korolev, P. A. Yunin, M. N. Drozdov, S. A. Kraev, O. I. Khrykin, V. I. Shashkin, “Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1503–1506 ; Semiconductors, 51:11 (2017), 1449–1452 |
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2016 |
| 14. |
V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov, S. A. Kraev, E. A. Surovegina, V. I. Shashkin, P. A. Yunin, “Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1459–1462 ; Semiconductors, 50:11 (2016), 1439–1442 |
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