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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. A. Belorusov, E. I. Goldman, G. V. Chucheva, “A weak manifestation of the field effect in metal-dielectric-semiconductor structures with a ferroelectric insulating layer
Ba$_{x}$Sr$_{1-x}$TiO$_{3}$”, Fizika Tverdogo Tela, 63:11 (2021), 1887–1889   |
| 2. |
D. A. Belorusov, E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Silicon ultrathin oxide (4.2 nm) – polysilicon structures resistant to field damages”, Fizika i Tekhnika Poluprovodnikov, 55:1 (2021), 24–27 ; Semiconductors, 55:1 (2021), 21–24 |
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2020 |
| 3. |
E. I. Goldman, V. G. Naryshkina, G. V. Chucheva, “Electrophysical properties investigation of Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ ferroelectric films in paraelectric state”, Fizika Tverdogo Tela, 62:8 (2020), 1226–1231 ; Phys. Solid State, 62:8 (2020), 1380–1385 |
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| 4. |
M. S. Afanasiev, E. I. Goldman, G. V. Chucheva, A. E. Nabiyev, J. È. Huseynov, N. Sh. Aliev, “Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films”, Fizika Tverdogo Tela, 62:1 (2020), 121–124 ; Phys. Solid State, 62:1 (2020), 164–167 |
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2019 |
| 5. |
E. I. Goldman, S. A. Levashov, G. V. Chucheva, “Features of the characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 481–484 ; Semiconductors, 53:4 (2019), 465–468 |
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| 6. |
E. I. Goldman, A. E. Nabiyev, V. G. Naryshkina, G. V. Chucheva, “On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 89–92 ; Semiconductors, 53:1 (2019), 85–88 |
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| 7. |
E. I. Goldman, N. F. Kuharskaya, S. A. Levashov, G. V. Chucheva, “Determination of the parameters of metal–insulator–semiconductor structures with ultrathin insulating layer from high-frequency capacitance–voltage measurements”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 46–49 ; Semiconductors, 53:1 (2019), 42–45 |
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2017 |
| 8. |
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva, “Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188 ; Semiconductors, 51:9 (2017), 1136–1140 |
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