On the nature of the increase in the electron mobility in the inversion channel at the silicon–oxide interface after the field effect

The conduction characteristics of the inversion channel of Si-transistor structures after the ionic polarization and depolarization of samples are measured in (0–5)-T transverse magnetic fields at temperatures from 100 to 200 K. After ionic polarization in a strong electric field at 420 K, no less than 6 $\times$ 10$^{13}$ cm$^{-2}$ ions flowed through the oxide. The previously found tenfold increase in the conductivity in the source–drain circuit after the polarization of insulating layers is explained by the formation of a new electron transport path along the surface impurity band, related to delocalized D$^-$ states; these states are generated by neutralized ions located in the insulating layer at its interface with the semiconductor.