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This article is cited in 9 scientific papers (total in 9 papers)
Surface, interfaces, thin films
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Abstract:
The high-frequency capacitance–voltage characteristics of metal–oxide–semiconductor structures on $n$-Si substrates with an oxide thickness of 39 $\mathring{\mathrm{A}}$ are studied upon being subjected to damage by field stress. It is shown that the action of a high, but pre-breakdown electric field on an ultrathin insulating layer brings about the formation of a large number of additional localized interface electron states with an energy level arranged at 0.14 eV below the conduction band of silicon. It is found that, as the field stress is increased, the recharging of newly formed centers provides the accumulation of excess charge up to 8 $\times$ 10$^{12}$ cm$^{-2}$ at the silicon–oxide interface. The lifetime of localized centers created under field stress is two days, after which the dependences of the charge localized at the semiconductor–insulator interface on the voltage at the gate after and before field stress are practically the same.
Received: 10.01.2017 Accepted: 20.01.2017
Citation:
E. I. Goldman, S. A. Levashov, V. G. Naryshkina, G. V. Chucheva, “Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1185–1188; Semiconductors, 51:9 (2017), 1136–1140
Linking options:
https://www.mathnet.ru/eng/phts6037 https://www.mathnet.ru/eng/phts/v51/i9/p1185
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