Conductivity of metal–dielectric–semiconductor structures based on ferroelectric films

In this paper, we present the results of experimental studies of the frequency and temperature dependences of the electrical conductivity of metal–dielectric–semiconductor structures based on ferroelectric films of the Ba$_{0.8}$Sr$_{0.2}$TiO$_{3}$ composition. In the temperature range of 290–400 K and the frequency range of 25–10$^6$ Hz, the conductivity was found to obey the $\sigma\propto f^{0.76}$ law, which is characteristic of the hopping mechanism of charge transfer over states localized near the Fermi level. The density of these states, average distance and time of jumps are estimated.