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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
R. A. Castro, S. E. Khachaturov, A. A. Kononov, N. I. Anisimova, “Study of relaxers distribution in thin layers of amorphous MoTe$_{2}$”, Fizika Tverdogo Tela, 63:11 (2021), 1852–1855   |
| 2. |
A. I. Popov, A. D. Barinov, V. M. Yemets, R. A. Kastro, A. V. Kolobov, A. A. Kononov, A. V. Ovcharov, T. S. Chukanova, “Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films”, Fizika Tverdogo Tela, 63:11 (2021), 1844–1851 |
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| 3. |
A. A. Kononov, N. A. Nikonorova, R. A. Castro, “Characteristic features of the charge transfer processes in the nanocomposites based on polyphenylene oxide with fullerene and endofullerene”, Fizika Tverdogo Tela, 63:10 (2021), 1706–1710 ; Phys. Solid State, 63:11 (2021), 1670–1674 |
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| 4. |
R. A. Kastro-Arata, G. I. Grabko, A. A. Kononov, N. I. Anisimova, M. Krbal, A. V. Kolobov, “Charge transfer in thin layers of glassy Ge$_{28.5}$Pb$_{14.5}$Fe$_{0.5}$S$_{56.5}$”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 450–454 |
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2020 |
| 5. |
A. A. Kononov, R. A. Castro Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Yu. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov, “Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:5 (2020), 461–465 ; Semiconductors, 54:5 (2020), 558–562 |
| 6. |
R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Yu. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov, “Structural and dielectric study of thin amorphous layers of the Ge–Sb–Te system prepared by RF magnetron sputtering”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 149–152 ; Semiconductors, 54:2 (2020), 201–204 |
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2018 |
| 7. |
R. A. Castro, G. I. Grabko, A. A. Kononov, “Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Ðb$_{15}$S$_{56.5}$ glassy system”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1038–1040 ; Semiconductors, 52:9 (2018), 1160–1162 |
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| 8. |
R. A. Castro, N. I. Anisimova, A. A. Kononov, “Dielectric relaxation in thin layers of the Ge$_{28.5}$Ðb$_{15}$S$_{56.5}$ glassy system”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 912–915 ; Semiconductors, 52:8 (2018), 1043–1046 |
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