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This article is cited in 4 scientific papers (total in 4 papers)
Amorphous, glassy, organic semiconductors
Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system
R. A. Castro, N. I. Anisimova, A. A. Kononov Herzen State Pedagogical University of Russia, St. Petersburg
Abstract:
The results of studying dielectric relaxation processes in the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy $E_p$ = 0.40 eV and the molecular dipole moment $\mu$ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as $D^+$ and $D^-$.
Received: 16.05.2017 Accepted: 31.05.2017
Citation:
R. A. Castro, N. I. Anisimova, A. A. Kononov, “Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 912–915; Semiconductors, 52:8 (2018), 1043–1046
Linking options:
https://www.mathnet.ru/eng/phts5762 https://www.mathnet.ru/eng/phts/v52/i8/p912
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