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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 912–915
DOI: https://doi.org/10.21883/FTP.2018.08.46218.8649 (Mi phts5762) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Amorphous, glassy, organic semiconductors

Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system

R. A. Castro, N. I. Anisimova, A. A. Kononov

Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (317 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2018.08.46218.8649
Abstract: The results of studying dielectric relaxation processes in the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy $E_p$ = 0.40 eV and the molecular dipole moment $\mu$ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as $D^+$ and $D^-$.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.5005.2017/ВУ
Received: 16.05.2017
Accepted: 31.05.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1043–1046
DOI: https://doi.org/10.1134/S1063782618080092
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. A. Castro, N. I. Anisimova, A. A. Kononov, “Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 912–915; Semiconductors, 52:8 (2018), 1043–1046
Citation in format AMSBIB
\Bibitem{CasAniKon18}
\by R.~A.~Castro, N.~I.~Anisimova, A.~A.~Kononov
\paper Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 912--915
\mathnet{http://mi.mathnet.ru/phts5762}
\crossref{https://doi.org/10.21883/FTP.2018.08.46218.8649}
\elib{https://elibrary.ru/item.asp?id=35269435}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 1043--1046
\crossref{https://doi.org/10.1134/S1063782618080092}
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  • https://www.mathnet.ru/eng/phts/v52/i8/p912
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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