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This article is cited in 2 scientific papers (total in 2 papers)
Continued publication of the materials of the seminar in FTT N 12/21
Semiconductors
Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films
A. I. Popovab, A. D. Barinovab, V. M. Yemetsa, R. A. Kastroc, A. V. Kolobovc, A. A. Kononovc, A. V. Ovcharovd, T. S. Chukanovaa a National Research University "Moscow Power Engineering Institute", Moscow, Russia
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia
c Herzen State Pedagogical University of Russia, St. Petersburg, Russia
d National Research Centre "Kurchatov Institute", Moscow, Russia
Abstract:
Investigation of transition metals effect on the phase composition, electrical and dielectric properties of diamond-like silicon-carbon films prepared by the plasma-chemical decomposition of polyphenylmethylsiloxane have been carried out. Frequency, temperature and concentration dependences of these properties are obtained. It is shown that an increase in the metal concentration in the film leads to a continuous increase in the electrical conductivity, while the concentration dependences of the dielectric constant and the dielectric loss tangent have a minimum at metal concentrations of 0.5–2 at.%. Possible reasons for this phenomenon are analyzed.
Keywords:
silicon-carbon films, transition metals, structure, electrical conductivity, dielectric constant, dielectric losses, concentration dependences, polarization.
Received: 28.05.2021 Revised: 28.05.2021 Accepted: 10.06.2021
Citation:
A. I. Popov, A. D. Barinov, V. M. Yemets, R. A. Kastro, A. V. Kolobov, A. A. Kononov, A. V. Ovcharov, T. S. Chukanova, “Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films”, Fizika Tverdogo Tela, 63:11 (2021), 1844–1851
Linking options:
https://www.mathnet.ru/eng/ftt7957 https://www.mathnet.ru/eng/ftt/v63/i11/p1844
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