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Fizika Tverdogo Tela, 2021, Volume 63, Issue 11, Pages 1844–1851
DOI: https://doi.org/10.21883/FTT.2021.11.51586.132 (Mi ftt7957) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Continued publication of the materials of the seminar in FTT N 12/21
Semiconductors

Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films

A. I. Popovab, A. D. Barinovab, V. M. Yemetsa, R. A. Kastroc, A. V. Kolobovc, A. A. Kononovc, A. V. Ovcharovd, T. S. Chukanovaa

a National Research University "Moscow Power Engineering Institute", Moscow, Russia
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, Russia
c Herzen State Pedagogical University of Russia, St. Petersburg, Russia
d National Research Centre "Kurchatov Institute", Moscow, Russia
Full-text PDF (793 kB) Citations (2)
DOI: https://doi.org/10.21883/FTT.2021.11.51586.132
Abstract: Investigation of transition metals effect on the phase composition, electrical and dielectric properties of diamond-like silicon-carbon films prepared by the plasma-chemical decomposition of polyphenylmethylsiloxane have been carried out. Frequency, temperature and concentration dependences of these properties are obtained. It is shown that an increase in the metal concentration in the film leads to a continuous increase in the electrical conductivity, while the concentration dependences of the dielectric constant and the dielectric loss tangent have a minimum at metal concentrations of 0.5–2 at.%. Possible reasons for this phenomenon are analyzed.
Keywords: silicon-carbon films, transition metals, structure, electrical conductivity, dielectric constant, dielectric losses, concentration dependences, polarization.
Funding agency Grant number
Russian Foundation for Basic Research 19-07-00021
Received: 28.05.2021
Revised: 28.05.2021
Accepted: 10.06.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Popov, A. D. Barinov, V. M. Yemets, R. A. Kastro, A. V. Kolobov, A. A. Kononov, A. V. Ovcharov, T. S. Chukanova, “Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films”, Fizika Tverdogo Tela, 63:11 (2021), 1844–1851
Citation in format AMSBIB
\Bibitem{PopBarYem21}
\by A.~I.~Popov, A.~D.~Barinov, V.~M.~Yemets, R.~A.~Kastro, A.~V.~Kolobov, A.~A.~Kononov, A.~V.~Ovcharov, T.~S.~Chukanova
\paper Effect of transition metals on the dielectric properties of diamond-like silicon-carbon films
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 11
\pages 1844--1851
\mathnet{http://mi.mathnet.ru/ftt7957}
\crossref{https://doi.org/10.21883/FTT.2021.11.51586.132}
\elib{https://elibrary.ru/item.asp?id=46636897}
Linking options:
  • https://www.mathnet.ru/eng/ftt7957
  • https://www.mathnet.ru/eng/ftt/v63/i11/p1844
    • This publication is cited in the following 2 articles:
    1. A. I. Popov, A. D. Barinov, V. M. Yemets, M. Yu. Presnyakov, T. S. Chukanova, “Field Frequency Variation during Plasma-Chemical Deposition of Silicon-Carbon Films as a Method for Their Structural Modification”, Poverkhnost. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya, 2023, no. 10, 22  crossref
    2. A. I. Popov, A. D. Barinov, V. M. Yemets, D. A. Zezin, T. S. Chukanova, V. P. Afanas'ev, M. A. Semenov-Shefov, V. A. Terekhov, E. P. Domashevskaya, M. Yu. Presnyakov, M. A. Shapetina, “Influence of Aluminium on the Structure and Electrical Properties of Amorphous Diamond-Like Silicon-Carbon Films”, Poverkhnost. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya, 2023, no. 11, 24  crossref
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