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This article is cited in 1 scientific paper (total in 1 paper)
Amorphous, glassy, organic semiconductors
Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system
R. A. Castroa, G. I. Grabkob, A. A. Kononova a Herzen State Pedagogical University of Russia, St. Petersburg
b Zabaikalsky State University, Chita
Abstract:
The dielectric relaxation processes in Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system are investigated. The introduction of an iron impurity into a glass matrix is shown to sharply increase the permittivity $\varepsilon$' and decrease the dissipation factor tan$\delta$. The found regularities are explained within the cluster structure (two-phase) model of doped glass.
Keywords:
Glassy Systems, Dissipation Factor Tan$\delta$, Doped Glasses, Iron Impurities, Dipole Polarization Relaxation.
Received: 11.12.2017 Accepted: 31.01.2018
Citation:
R. A. Castro, G. I. Grabko, A. A. Kononov, “Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1038–1040; Semiconductors, 52:9 (2018), 1160–1162
Linking options:
https://www.mathnet.ru/eng/phts5736 https://www.mathnet.ru/eng/phts/v52/i9/p1038
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