Abstract:
The dielectric relaxation processes in Ge28.5Рb15S56.5 glassy system are investigated. The introduction of an iron impurity into a glass matrix is shown to sharply increase the permittivity ε' and decrease the dissipation factor tanδ. The found regularities are explained within the cluster structure (two-phase) model of doped glass.
Citation:
R. A. Castro, G. I. Grabko, A. A. Kononov, “Low-frequency dielectric relaxation in iron-doped Ge28.5Рb15S56.5 glassy system”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1038–1040; Semiconductors, 52:9 (2018), 1160–1162