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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
M. S. Tuzhilkin, P. G. Bespalova, M. V. Mishin, I. E. Kolesnikov, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Formation of Au nanoparticles and features of etching of a Si substrate under irradiation with atomic and molecular ions”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 90–96   ; Semiconductors, 54:1 (2020), 137–143 |
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2019 |
| 2. |
A. I. Titov, K. V. Karabeshkin, P. A. Karaseov, A. I. Struchkov, “Do chemical effects affect the accumulation of structural damage during the implantation of fluorine ions into GaN?”, Fizika i Tekhnika Poluprovodnikov, 53:11 (2019), 1455–1458 ; Semiconductors, 53:11 (2019), 1415–1418 |
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2017 |
| 3. |
E. N. Shubina, P. A. Karaseov, A. I. Titov, O. A. Podsvirov, A. Ya. Vinogradov, N. N. Karasev, A. V. Pozdnyakov, “The effect of diborane additive on the plasma-chemical properties of deposited carbon films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 80–88 ; Tech. Phys. Lett., 43:1 (2017), 81–84 |
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N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Dislocation-related photoluminescence in silicon implanted with fluorine ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 14–20 ; Tech. Phys. Lett., 43:1 (2017), 50–52 |
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2016 |
| 5. |
K. V. Karabeshkin, P. A. Karaseov, A. I. Titov, “Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1009–1015 ; Semiconductors, 50:8 (2016), 989–995 |
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1977 |
| 6. |
I. A. Abroyan, V. V. Korablev, N. N. Petrov, A. I. Titov, “Secondary-emission methods of investigating the structure and composition of the surface layers of solids”, UFN, 122:3 (1977), 528–529 ; Phys. Usp., 20:7 (1977), 640–642 |
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