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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. V. Lebedev, T. V. L'vova, A. N. Smirnov, V. Yu. Davydov, “Modification of the electronic properties of the $n$-InP(100) surface with sulfide solutions”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 895–900   ; Semiconductors, 55:11 (2021), 844–849 |
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| 2. |
P. A. Dementev, E. V. Dementevā, T. V. L'vova, V. L. Berkovits, M. V. Lebedev, “Optical and electronic properties of passivated InP(001) surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 644–648 ; Semiconductors, 55:8 (2021), 667–671 |
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2019 |
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V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, S. D. Konenkov, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Synthesis of hexagonal AlN č GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019), 574–577 ; Tech. Phys., 64:4 (2019), 531–534 |
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| 4. |
M. V. Lebedev, T. V. L'vova, A. L. Shakhmin, O. V. Rakhimova, P. A. Dementev, I. V. Sedova, “Development of the physicochemical properties of the GaSb(100) surface in ammonium sulfide solutions”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 908–916 ; Semiconductors, 53:7 (2019), 892–900 |
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2018 |
| 5. |
V. N. Bessolov, E. V. Gushchina, E. V. Konenkova, T. V. L'vova, V. N. Panteleev, M. P. Scheglov, “Hexagonal AlN layers grown on sulfided Si(100) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018), 96–103 ; Tech. Phys. Lett., 44:1 (2018), 81–83 |
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2017 |
| 6. |
M. V. Lebedev, T. V. L'vova, S. I. Pavlov, I. V. Sedova, “Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1138–1145 ; Semiconductors, 51:8 (2017), 1093–1100 |
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2016 |
| 7. |
O. S. Komkov, D. D. Firsov, T. V. L'vova, I. V. Sedova, A. N. Semenov, V. A. Solov'ev, S. V. Ivanov, “Photoreflectance of indium antimonide”, Fizika Tverdogo Tela, 58:12 (2016), 2307–2313 ; Phys. Solid State, 58:12 (2016), 2394–2400 |
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| 8. |
N. T. Bagraev, E. I. Chaikina, E. Yu. Danilovskii, D. S. Gets, L. E. Klyachkin, T. V. L'vova, A. M. Malyarenko, “Sulfur passivation of semi-insulating GaAs: transition from Coulomb blockade to weak localization regime”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 474–484 ; Semiconductors, 50:4 (2016), 466–477 |
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1992 |
| 9. |
V. N. Bessolov, M. V. Lebedev, T. V. L'vova, E. B. Novikov, “Sulfide passivation of $\mathrm{A}^{3}\mathrm{B}^{5}$ semiconductors: model description and experiment”, Fizika Tverdogo Tela, 34:6 (1992), 1713–1718 |
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1984 |
| 10. |
A. A. Bykovnikov, O. V. Ivanova, O. V. Konstantinov, T. V. L'vova, O. A. Mezrin, “On the Kinetics of the Enchancement of Barrier-Structure Rectifier Photoelectromotive
Force”, Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1256–1262 |
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