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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1138–1145
DOI: https://doi.org/10.21883/FTP.2017.08.44803.8517a
(Mi phts6083)
 

This article is cited in 4 scientific papers (total in 4 papers)

Manufacturing, processing, testing of materials and structures

Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)

M. V. Lebedev, T. V. L'vova, S. I. Pavlov, I. V. Sedova

Ioffe Institute, St. Petersburg
Abstract: X-ray photoemission spectroscopy and scanning electron microscopy are used to study the effect of a solvent on the chemical composition of a sulfide passivating layer formed on GaSb (100) surface. Treatment of the GaSb (100) surface with ammonium-sulfide solutions results in the formation of a thick (several tens of nanometers) coating composed of a mixture of various binary and ternary gallium and antimony sulfides. The chemical compositions of the passivating sulfide layers formed in aqueous and alcoholic ammonium-sulfide solutions are different. Annealing of the sulfide layer at 360$^\circ$C in ultrahigh vacuum leads to the partial desorption of antimony from the surface, the decomposition of ternary sulfides into their binary constituents, and change in the surface band bending of this layer.
Received: 17.01.2017
Accepted: 15.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1093–1100
DOI: https://doi.org/10.1134/S106378261708019X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Lebedev, T. V. L'vova, S. I. Pavlov, I. V. Sedova, “Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1138–1145; Semiconductors, 51:8 (2017), 1093–1100
Citation in format AMSBIB
\Bibitem{LebLvoPav17}
\by M.~V.~Lebedev, T.~V.~L'vova, S.~I.~Pavlov, I.~V.~Sedova
\paper Effect of ammonium-sulfide solvent on the surface passivation of GaSb (100)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1138--1145
\mathnet{http://mi.mathnet.ru/phts6083}
\crossref{https://doi.org/10.21883/FTP.2017.08.44803.8517a}
\elib{https://elibrary.ru/item.asp?id=29938296}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1093--1100
\crossref{https://doi.org/10.1134/S106378261708019X}
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  • https://www.mathnet.ru/eng/phts/v51/i8/p1138
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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