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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev, “Monopolarity of hot charge carrier multiplication in A$^{\mathrm{III}}$B$^{\mathrm{V}}$ semiconductors at high electric field and noiseless avalanche photodiodes (a review)”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 995–1010   |
| 2. |
E. V. Kunitsyna, A. A. Pivovarova, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, N. D. Il'inskaya, Yu. P. Yakovlev, “Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 55:7 (2021), 607–613 ; Semiconductors, 55:7 (2021), 601–607 |
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2020 |
| 3. |
E. V. Kunitsyna, M. A. Royz, I. A. Andreev, E. A. Grebenshchikova, A. A. Pivovarova, M. Ahmetoglu (Afrailov), E. V. Lebiadok, R. Yu. Mikulich, N. D. Il'inskaya, Yu. P. Yakovlev, “Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)”, Fizika i Tekhnika Poluprovodnikov, 54:7 (2020), 677–683 ; Semiconductors, 54:7 (2020), 796–802 |
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2019 |
| 4. |
M. P. Mikhailova, E. V. Ivanov, L. V. Danilov, R. V. Levin, I. A. Andreev, E. V. Kunitsyna, Yu. P. Yakovlev, “Electroluminescence in $n$-GaSb/InAs/$p$-GaSb heterostructures with a single quantum well grown by MOVPE”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 50–54 ; Semiconductors, 53:1 (2019), 46–50 |
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2018 |
| 5. |
E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il'inskaya, Yu. P. Yakovlev, “GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1094–1099 ; Semiconductors, 52:9 (2018), 1215–1220 |
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| 6. |
M. P. Mikhailova, I. A. Andreev, G. G. Konovalov, L. V. Danilov, E. V. Ivanov, E. V. Kunitsyna, N. D. Il'inskaya, R. V. Levin, B. V. Pushnii, Yu. P. Yakovlev, “Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 906–911 ; Semiconductors, 52:8 (2018), 1037–1042 |
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2017 |
| 7. |
M. V. Bogdanovich, D. M. Kabanov, E. V. Lebiadok, P. V. Shpak, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Shchemelev, I. A. Andreev, E. V. Kunitsyna, È. V. Ivanov, Yu. P. Yakovlev, “Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons”, Zhurnal Tekhnicheskoi Fiziki, 87:2 (2017), 315–318 ; Tech. Phys., 62:2 (2017), 344–346 |
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| 8. |
L. V. Danilov, M. P. Mikhailova, I. A. Andreev, G. G. Zegrya, “Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1196–1201 ; Semiconductors, 51:9 (2017), 1148–1152 |
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2016 |
| 9. |
E. V. Kunitsyna, E. A. Grebenshchikova, G. G. Konovalov, I. A. Andreev, Yu. P. Yakovlev, “Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1420–1424 ; Semiconductors, 50:10 (2016), 1403–1407 |
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1992 |
| 10. |
I. A. Andreev, A. N. Baranov, M. P. Mikhailova, K. D. Moiseev, A. V. Pentsov, Y. P. Smorchkova, V. V. Sherstnev, Yu. P. Yakovlev, “UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL
RANGE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992), 50–53 |
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1991 |
| 11. |
I. A. Andreev, M. P. Mikhailova, S. V. Mel'nikov, Y. P. Smorchkova, Yu. P. Yakovlev, “Лавинное умножение и коэффициенты ионизации в GaInAsSb”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1429–1436 |
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1990 |
| 12. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, M. P. Mikhailova, K. D. Moiseev, I. N. Timchenko, V. E. Shestnev, V. E. Umanskii, Yu. P. Yakovlev, “UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF
2-3,5 MU-M”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990), 27–32 |
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1989 |
| 13. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, N. N. Marinskaya, M. A. Mirsagatov, M. P. Mikhailova, Yu. P. Yakovlev, “LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND
MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989), 71–76 |
| 14. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, S. G. Konnikov, M. A. Mirsagatov, M. P. Mikhailova, O. V. Salata, V. B. Umanskii, G. M. Filaretova, Yu. P. Yakovlev, “SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF
1,5-2,3 MU-M”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989), 15–19 |
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1988 |
| 15. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, M. A. Mirsagatov, M. P. Mikhailova, Yu. P. Yakovlev, “GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION
AND MULTIPLICATION AREAS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988), 986–991 |
| 16. |
I. A. Andreev, A. N. Baranov, M. A. Mirsagatov, M. P. Mikhailova, A. A. Rogachev, G. M. Filaretova, Yu. P. Yakovlev, “CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988), 389–393 |
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1987 |
| 17. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, M. A. Mirsagatov, M. P. Mikhailova, Yu. P. Yakovlev, “Avalanche multiplication in photodiode structures, based on $Ga\,In\,As\,Sb$ solid-solutions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:8 (1987), 481–485 |
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1986 |
| 18. |
I. A. Andreev, M. A. Afrailov, A. N. Baranov, V. G. Danl'chenko, M. A. Mirsagatov, M. P. Mikhailova, Yu. P. Yakovlev, “Photodiodes based on $Ga\,In\,As\,Sb/Ga\,Al\,As\,Sb$ solid-solutions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986), 1311–1315 |
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1985 |
| 19. |
I. A. Andreev, A. N. Baranov, M. Z. Zhingarev, V. I. Korol'kov, M. P. Mikhailova, Yu. P. Yakovlev, “Dark Currents in GaAlSb(As) Diode
Structures of «Resonant» Composition”, Fizika i Tekhnika Poluprovodnikov, 19:9 (1985), 1605–1611 |
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1984 |
| 20. |
I. A. Andreev, M. P. Mikhailova, A. N. Semenov, S. V. Slobodchikov, N. M. Stus, G. M. Filaretova, “Collision-Ionization Coefficients of Electrons and Holes in Narrow-B and Solid Solutions Based on InAs”, Fizika i Tekhnika Poluprovodnikov, 18:3 (1984), 545–547 |
| 21. |
I. A. Andreev, M. F. Dubovik, “NEW PIEZOELECTRIC LANGASIT LA3GA5SIO14-MATERIAL WITH ZERO
TEMPERATURE-COEFFICIENT OF ELASTIC OSCILLATION PARTICLES”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:8 (1984), 487–491 |
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1983 |
| 22. |
I. A. Andreev, Yu. S. Kuz'minov, N. M. Polozkov, “WEAK TEMPERATURE-DEPENDENCE OF ELASTIC PLIABILITY S11 AND S44 OF A
BA0.39SR0.61NB2O6 CRYSTAL NEAR THE 20-DEGREES-C”, Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983), 1632–1635 |
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2018 |
| 23. |
L. V. Danilov, M. P. Mikhailova, R. V. Levin, G. G. Konovalov, E. V. Ivanov, I. A. Andreev, B. V. Pushnyi, G. G. Zegrya, “Enhancement of photoconductivity by carrier screening effect in $n$-GaSb/$n$-InAs/$p$-GaSb heterostructure with single deep quantum well”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 476 ; Semiconductors, 52:4 (2018), 493–496 |
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