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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Registration of terahertz radiation with silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1195–1202   |
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| 2. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Terahertz emission from silicon carbide nanostructures”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1027–1033 |
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| 3. |
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov, “Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 103–111 ; Semiconductors, 55:2 (2021), 137–145 |
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2020 |
| 4. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, K. B. Taranets, “Terahertz response of biological tissue for diagnostic and treatment in personalized medicine”, Zhurnal Tekhnicheskoi Fiziki, 90:9 (2020), 1502–1505 |
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2016 |
| 5. |
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1353–1357 ; Semiconductors, 50:10 (2016), 1333–1337 |
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| 6. |
N. T. Bagraev, A. L. Chernev, L. E. Klyachkin, A. M. Malyarenko, A. K. Emelyanov, M. V. Dubina, “Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1230–1237 ; Semiconductors, 50:9 (2016), 1208–1215 |
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| 7. |
N. T. Bagraev, V. Yu. Grigoryev, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov, “Room temperature de Haas–van Alphen effect in silicon nanosandwiches”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1047–1054 ; Semiconductors, 50:8 (2016), 1025–1033 |
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1991 |
| 8. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, V. L. Sukhanov, “Фрактально-диффузионные $p{-}n$-переходы в кремнии”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 644–654 |
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1990 |
| 9. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, I. S. Polovtsev, V. L. Sukhanov, “Генерация и отжиг дефектов при совмещенном геттерировании в кремнии
$n$-типа. II. Точечные дефекты, индуцированные геттерирующими микродефектами”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1563–1573 |
| 10. |
N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, I. S. Polovtsev, V. L. Sukhanov, “Генерация и отжиг дефектов при совмещенном генерировании в кремнии
$n$-типа. I. Геттерирующие микродефекты”, Fizika i Tekhnika Poluprovodnikov, 24:9 (1990), 1557–1562 |
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1988 |
| 11. |
L. S. Berman, A. M. Malyarenko, A. D. Remenyuk, V. L. Sukhanov, M. G. Tolstobrov, “Распределение радиационных дефектов и физическая природа
«аномальных» спектров DLTS в кремниевых диодах, облученных
$\alpha$-частицами”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 844–848 |
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1987 |
| 12. |
L. E. Klyachkin, A. M. Malyarenko, V. L. Sukhanov, L. M. Chistyakova, “CRITERIA OF OPTIMAL CLARIFICATION OF AN OPTIC-SYSTEM OF
AIR-SIOX-POLYCRYSTALLINE-SI-MONOCRYSTALLINE-SI IN THE SPECTRAL REGION
550-950-NM”, Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987), 823–826 |
| 13. |
E. M. Verbitskaya, V. K. Eremin, A. M. Malyarenko, N. B. Strokan, V. L. Sukhanov, “Contribution of Silicon Recombination Characteristics into Resolution of Detectors of Short-Path Particles”, Fizika i Tekhnika Poluprovodnikov, 21:10 (1987), 1883–1887 |
| 14. |
E. M. Verbitskaya, V. K. Ermin, A. M. Malyarenko, L. S. Medvedev, N. V. Strokan, V. L. Sukhanov, “Charge Transfer in the Structures of Silicon Detectors with the Build-in Field”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1394–1399 |
| 15. |
E. M. Verbitskaya, V. K. Eremin, A. M. Malyarenko, V. I. Sakharov, I. T. Serenkov, N. B. Strokan, V. L. Sukhanov, “Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 565–569 |
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1986 |
| 16. |
V. K. Eremin, E. M. Verbitskaya, N. B. Strokan, V. L. Sukhanov, A. M. Malyarenko, “RESOLUTION OF THE ALPHA-SPECTRUM SUPER-THIN STRUCTURE BY SILICONE PLANAR
DETECTORS”, Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986), 1987–1989 |
| 17. |
E. A. Verbitskaya, V. K. Eremin, A. M. Malyarenko, N. B. Strokan, V. L. Sukhanov, “High-resolution performance of silicon detectors of short-range particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:20 (1986), 1254–1258 |
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1985 |
| 18. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, V. L. Sukhanov, N. V. Zabrodskaya, “INVESTIGATION OF THE THIN
SIOX(O-GREATER-THAN-OR-EQUAL-TO-X-GREATER-THAN-OR-EQUAL-TO-2) FILMS ON
SPECTRAL CHARACTERISTICS OF SILICON P-N TRANSITIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2191–2195 |
| 19. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, V. L. Sukhanov, “Photoelectric characteristics of the $Si\,O_{x}$ ($1\leqslant x \leqslant 2$)-polycrystal $Si-Ge$ system”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985), 675–679 |
| 20. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, V. L. Sukhanov, “Spectral characteristics of selective photo-detectors for the visible and ultraviolet-spectrum area”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:6 (1985), 354–358 |
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1983 |
| 21. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, A. V. Nalivkin, V. L. Sukhanov, V. V. Tuchkevich, “Correction”, Fizika i Tekhnika Poluprovodnikov, 17:12 (1983), 2232 ; Semiconductors, 17:12 (1983), 1431  |
| 22. |
L. E. Klyachkin, L. B. Lopatina, A. M. Malyarenko, A. V. Nalivkin, V. L. Sukhanov, V. V. Tuchkevich, “Исследование вольтамперных характеристик $p{-}n$-переходов
поликристаллический кремний–монокристаллический кремний”, Fizika i Tekhnika Poluprovodnikov, 17:9 (1983), 1648–1651 |
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