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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
M. V. Dorokhin, M. S. Boldin, E. A. Uskova, A. V. Boryakov, P. B. Demina, I. V. Erofeeva, A. V. Zdoroveyshchev, V. E. Kotomina, Yu. M. Kuznetsov, E. A. Lantsev, A. A. Popov, V. N. Trushin, “Formation of a fine Si$_{1-x}$Ge$_{x}$ thermoelectric by electro-pulse plasma sintering”, Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021), 1975–1983 |
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2020 |
2. |
M. V. Dorokhin, P. B. Demina, Yu. M. Kuznetsov, I. V. Erofeeva, A. V. Zdoroveyshchev, M. S. Boldin, E. A. Lantsev, A. A. Popov, E. A. Uskova, V. N. Trushin, “Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit”, Nanosystems: Physics, Chemistry, Mathematics, 11:6 (2020), 680–684 |
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2019 |
3. |
M. V. Dorokhin, P. B. Demina, A. V. Budanov, Yu. N. Vlasov, G. I. Kotov, A. V. Zdoroveyshchev, V. N. Trushin, B. N. Zvonkov, “Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 52–55 ; Tech. Phys. Lett., 45:3 (2019), 235–238 |
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2018 |
4. |
E. S. Demidov, V. V. Sdobnyakov, G. V. Vazenmiller, Yu. I. Chigirinskii, Yu. A. Dudin, V. P. Lesnikov, V. N. Trushin, M. S. Boldin, O. A. Belkin, A. A. Bobrov, N. V. Sakharov, “Manufacturing of sputtering composite targets containing phases of Co$_{2}$FeSi or Co$_{2}$MnSi Heusler alloy”, Zhurnal Tekhnicheskoi Fiziki, 88:7 (2018), 1032–1035 ; Tech. Phys., 63:7 (2018), 1002–1005 |
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5. |
M. V. Dorokhin, I. V. Erofeeva, Yu. M. Kuznetsov, M. V. Boldin, A. V. Boryakov, A. A. Popov, E. A. Lantsev, N. V. Sakharov, P. B. Demina, A. V. Zdoroveyshchev, V. N. Trushin, “Investigation of the initial stages of spark-plasma sintering of Si-Ge based thermoelectric materials”, Nanosystems: Physics, Chemistry, Mathematics, 9:5 (2018), 622–630 |
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2016 |
6. |
A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
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Organisations |
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