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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
N. D. Zhukov, M. V. Gavrikov, “STM parameters of semiconductor colloidal quantum dots”, Meždunar. nauč.-issled. žurn., 2021, no. 8(110), 19–27  |
| 2. |
N. D. Zhukov, S. N. Shtykov, M. V. Gavrikov, S. A. Lazarev, O. Yu. Tsvetkova, “An investigation of the structural and physical properties of colloidal quantum dots of narrow-band semiconductors via electron and scanning probe microscopy”, Meždunar. nauč.-issled. žurn., 2021, no. 7(109), 26–34 |
| 3. |
V. F. Kabanov, A. I. Mikhailov, M. V. Gavrikov, “Analysis of the energy spectrum of indium antimonide quantum dots with temperature changes”, Nanosystems: Physics, Chemistry, Mathematics, 12:1 (2021), 113–117   |
| 4. |
N. D. Zhukov, M. V. Gavrikov, V. F. Kabanov, I. T. Yagudin, “Single-electron emission-injection transport in a microstructure with colloidal quantum dots of narrow-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 319–325 ; Semiconductors, 55:5 (2021), 470–475 |
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| 5. |
V. F. Kabanov, A. I. Mikhailov, M. V. Gavrikov, “Shape effect on the electrical properties of indium-antimonide quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 237–240 ; Semiconductors, 55:3 (2021), 315–318 |
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| 6. |
V. F. Kabanov, A. I. Mikhailov, M. V. Gavrikov, “Thermionic emission from indium antimonide quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 44–46 ; Tech. Phys. Lett., 47:5 (2021), 385–387 |
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2020 |
| 7. |
N. D. Zhukov, M. V. Gavrikov, D. V. Krylsky, “Single-electron transport in colloidal quantum dots of narrow-gap semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020), 47–50 ; Tech. Phys. Lett., 46:9 (2020), 881–884 |
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| 8. |
A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov, “Study of the electrophysical properties of colloidal indium antimonide quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 36–38 ; Tech. Phys. Lett., 46:4 (2020), 339–341 |
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2019 |
| 9. |
A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov, “Methodology of analyzing the InSb semiconductor quantum dots parameters”, Nanosystems: Physics, Chemistry, Mathematics, 10:6 (2019), 720–724 |
| 10. |
M. I. Shishkin, M. V. Gavrikov, I. T. Yagudin, A. G. Rokakh, “Features of electron transport and photoconductivity in the layer of nanoscale lead sulfide particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019), 3–6 ; Tech. Phys. Lett., 45:4 (2019), 370–373 |
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| 11. |
M. V. Gavrikov, N. D. Zhukov, D. S. Mosiyash, A. A. Khazanov, “Electron emission properties of submicron semiconductor particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 46–49 ; Tech. Phys. Lett., 44:12 (2018), 1230–1233 |
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2018 |
| 12. |
A. I. Mikhailov, V. F. Kabanov, E. G. Glukhovskoy, M. I. Shishkin, M. V. Gavrikov, “Methodology of analyzing the CdSe semiconductor quantum dots parameters”, Nanosystems: Physics, Chemistry, Mathematics, 9:4 (2018), 464–467 |
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