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This article is cited in 2 scientific papers (total in 2 papers)
Study of the electrophysical properties of colloidal indium antimonide quantum dots
A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov Saratov State University
Abstract:
The mechanisms of current transport through indium antimonide quantum dots (QDs) have been examined by analyzing normalized differential tunneling current–voltage characteristics. Electron tunneling with the discrete spectrum of QDs taken into account has been studied. The positions of the first three levels of their electronic spectrum have been estimated. It has been demonstrated that the mechanism of the observed field emission from a film structure of colloidal indium antimonide QDs is characterized adequately by the Morgulis–Stratton theory in the range of electric-field intensities corresponding to the experimental conditions.
Keywords:
quantum dots, indium antimonide, scanning tunneling microscopy, Morgulis–Stratton theory.
Received: 09.12.2019 Revised: 09.12.2019 Accepted: 10.01.2020
Citation:
A. I. Mikhailov, V. F. Kabanov, M. V. Gavrikov, “Study of the electrophysical properties of colloidal indium antimonide quantum dots”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020), 36–38; Tech. Phys. Lett., 46:4 (2020), 339–341
Linking options:
https://www.mathnet.ru/eng/pjtf5145 https://www.mathnet.ru/eng/pjtf/v46/i7/p36
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