Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 3, Pages 237–240
DOI: https://doi.org/10.21883/FTP.2021.03.50601.9471 (Mi phts5064) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Semiconductor structures, low-dimensional systems, quantum phenomena

Shape effect on the electrical properties of indium-antimonide quantum dots

V. F. Kabanov, A. I. Mikhailov, M. V. Gavrikov

Saratov State University, Saratov, Russia
Full-text PDF (335 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2021.03.50601.9471
Abstract: The impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, and scanning electron microscopy. It is shown that the real shape (spherical and cubic models) of quantum dots with the same characteristic size has a noticeable effect on the energy spectrum of the investigated objects and, accordingly, their electrical and optical properties.
Keywords: indium antimonide, quantum dots, spherical and cubic models, electron energy spectrum.
Funding agency Grant number
Russian Foundation for Basic Research 19-07-00087
19-07-00086
This study was supported by the Russian Foundation for Basic Research, project nos. 19-07-00087 and 19-07-00086.
Received: 22.06.2020
Revised: 05.10.2020
Accepted: 05.10.2020
English version:
Semiconductors, 2021, Volume 55, Issue 3, Pages 315–318
DOI: https://doi.org/10.1134/S1063782621030106
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. F. Kabanov, A. I. Mikhailov, M. V. Gavrikov, “Shape effect on the electrical properties of indium-antimonide quantum dots”, Fizika i Tekhnika Poluprovodnikov, 55:3 (2021), 237–240; Semiconductors, 55:3 (2021), 315–318
Citation in format AMSBIB
\Bibitem{KabMikGav21}
\by V.~F.~Kabanov, A.~I.~Mikhailov, M.~V.~Gavrikov
\paper Shape effect on the electrical properties of indium-antimonide quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 3
\pages 237--240
\mathnet{http://mi.mathnet.ru/phts5064}
\crossref{https://doi.org/10.21883/FTP.2021.03.50601.9471}
\elib{https://elibrary.ru/item.asp?id=45332270}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 3
\pages 315--318
\crossref{https://doi.org/10.1134/S1063782621030106}
Linking options:
  • https://www.mathnet.ru/eng/phts5064
  • https://www.mathnet.ru/eng/phts/v55/i3/p237
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:68
    Full-text PDF :37
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024