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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. V. Malevskaya, N. A. Kalyuzhnyy, D. A. Malevskii, S. A. Mintairov, A. M. Nadtochiy, M. V. Nakhimovich, F. Yu. Soldatenkov, M. Z. Shvarts, V. M. Andreev, “Infrared (850 nm) light-emitting diodes with multiple InGaAs quantum wells and “back” reflector”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 699–703   ; Semiconductors, 55:8 (2021), 686–690 |
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2020 |
| 2. |
M. M. Sobolev, F. Yu. Soldatenkov, “Capacitance spectroscopy of heteroepitaxial AlGaAs/GaAs $p$–$i$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1072–1078 ; Semiconductors, 54:10 (2020), 1260–1266 |
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2019 |
| 3. |
A. V. Malevskaya, V. P. Khvostikov, F. Yu. Soldatenkov, O. A. Khvostikova, A. S. Vlasov, V. M. Andreev, “A study of ohmic contacts of power photovoltaic converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:1 (2019), 12–15 ; Tech. Phys. Lett., 44:12 (2018), 1198–1200 |
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2018 |
| 4. |
D. M. Mitin, F. Yu. Soldatenkov, A. M. Mozharov, A. A. Vasil’ev, V. V. Neplokh, I. S. Mukhin, “Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs”, Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 789–792  |
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M. M. Sobolev, F. Yu. Soldatenkov, “Effect of dislocation-related deep levels in heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs $p$–$i$–$n$ structures on the relaxation time of nonequilibrium carriers”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 177–183 ; Semiconductors, 52:2 (2018), 165–171 |
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2017 |
| 6. |
V. P. Ulin, N. V. Ulin, F. Yu. Soldatenkov, “Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 481–496 ; Semiconductors, 51:4 (2017), 458–472 |
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2016 |
| 7. |
M. M. Sobolev, F. Yu. Soldatenkov, V. A. Kozlov, “Study of deep levels in GaAs $p$–$i$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 941–945 ; Semiconductors, 50:7 (2016), 924–928 |
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