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Nanosystems: Physics, Chemistry, Mathematics, 2018, Volume 9, Issue 6, Pages 789–792
DOI: https://doi.org/10.17586/2220-8054-2018-9-6-789-792 (Mi nano371) 		 
This article is cited in 3 scientific papers (total in 3 papers)

CHEMISTRY AND MATERIAL SCIENCE

Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs

D. M. Mitina, F. Yu. Soldatenkova, A. M. Mozharovb, A. A. Vasil’evb, V. V. Neplokhb, I. S. Mukhinbc

a Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya, 26, St. Petersburg, 194021, Russia
b Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Khlopina, 8, building 3, lit. A, St. Petersburg, 194021, Russia
c Saint Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskiy, 49, St. Petersburg, 197101, Russia
Full-text PDF (251 kB) Citations (3)
DOI: https://doi.org/10.17586/2220-8054-2018-9-6-789-792
Abstract: We report the results of research for the Pd/Ge/Au ohmic contact resistivity to n-GaAs thermally treated in various gas atmospheres at low temperature. The lowest contact resistivity of about $4\cdot 10^{-6}$ $\Omega\cdot$cm$^2$ was obtained with annealing under a hydrogen atmosphere. The mechanism of the ohmic contact formation upon annealing under a hydrogen atmosphere has been proposed. The achieved results can be used for development of multi-junction solar cells, power semiconductor devices, lasers, and nanowire-based structures sensible to a high temperature treatment.
Keywords: GaAs, ohmic contact, contact resistivity, thermal annealing, solid-phase regrowth.
Funding agency Grant number
Russian Science Foundation 17-79-30035
The work was supported by the Russian Science Foundation (grant No 17-79-30035).
Received: 08.11.2018
Bibliographic databases:
Document Type: Article
PACS: 81.05.Ea, 73.61.Ey, 73.40.Cg, 81.40.Ef
Language: English
Citation: D. M. Mitin, F. Yu. Soldatenkov, A. M. Mozharov, A. A. Vasil'ev, V. V. Neplokh, I. S. Mukhin, “Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs”, Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 789–792
Citation in format AMSBIB
\Bibitem{MitSolMoz18}
\by D.~M.~Mitin, F.~Yu.~Soldatenkov, A.~M.~Mozharov, A.~A.~Vasil'ev, V.~V.~Neplokh, I.~S.~Mukhin
\paper Annealing atmosphere influence on contact resistivity of ohmic Pd/Ge/Au contact to n-GaAs
\jour Nanosystems: Physics, Chemistry, Mathematics
\yr 2018
\vol 9
\issue 6
\pages 789--792
\mathnet{http://mi.mathnet.ru/nano371}
\crossref{https://doi.org/10.17586/2220-8054-2018-9-6-789-792}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000455960100013}
\elib{https://elibrary.ru/item.asp?id=36654091}
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    Citing articles in Google Scholar: Russian citations, English citations
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