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Publications in Math-Net.Ru |
Citations |
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2022 |
| 1. |
K. V. Likhachev, I. D. Breev, S. V. Kidalov, P. G. Baranov, S. S. Nagalyuk, A. V. Ankudinov, A. N. Anisimov, “6H-SiC nanoparticles integrated with an atomic force microscope for scanning quantum sensors”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:11 (2022), 810–815  ; JETP Letters, 116:11 (2022), 840–845 |
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2021 |
| 2. |
I. D. Breev, K. V. Likhachev, V. V. Yakovleva, I. P. Veishtort, A. M. Skomorokhov, S. S. Nagalyuk, E. N. Mokhov, G. V. Astakhov, P. G. Baranov, A. N. Anisimov, “Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021), 323–327 ; JETP Letters, 114:5 (2021), 274–278   |
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| 3. |
S. S. Nagalyuk, E. N. Mokhov, O. P. Kazarova, B. Ya. Ber, A. A. Anisimov, I. D. Breev, “Origin of green coloration in AlN crystals grown on SiC seeds”, Fizika i Tekhnika Poluprovodnikov, 55:6 (2021), 513–517  ; Semiconductors, 55:6 (2021), 546–550 |
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2020 |
| 4. |
E. N. Mokhov, M. K. Rabchinskii, S. S. Nagalyuk, M. R. Gafurov, O. P. Kazarova, “Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN”, Fizika i Tekhnika Poluprovodnikov, 54:3 (2020), 224–227 ; Semiconductors, 54:3 (2020), 278–281 |
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2019 |
| 5. |
A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848 ; Phys. Usp., 62:8 (2019), 754–794 |
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2017 |
| 6. |
E. N. Mokhov, O. P. Kazarova, V. A. Soltamov, S. S. Nagalyuk, “Influence of neutron irradiation on etching of SiC in KOH”, Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017), 1104–1106 ; Tech. Phys., 62:7 (2017), 1119–1121 |
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2016 |
| 7. |
Yu. V. Zhilyaev, V. V. Zelenin, E. N. Mokhov, S. S. Nagalyuk, N. K. Poletaev, A. P. Skvortsov, “Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 91–96 ; Tech. Phys. Lett., 42:2 (2016), 156–159 |
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