Persons
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
 
Lazarenko, Aleksandra

Statistics Math-Net.Ru
Total publications: 6
Scientific articles: 6

Number of views:
This page:35
Abstract pages:204
Full texts:77

https://www.mathnet.ru/eng/person122746
List of publications on Google Scholar
List of publications on ZentralBlatt

Publications in Math-Net.Ru Citations
2021
1. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev, “Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs”, Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1077–1080  mathnet  elib
2017
2. A. Lazarenko, K. A. Ivanov, A. R. Gubaidullin, M. A. Kaliteevskii, “Optimization of vertical cavity lasers with intracavity metal layers”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  547–550  mathnet  elib; Semiconductors, 51:4 (2017), 520–523 1
3. N. V. Kryzhanovskaya, Yu. S. Polubavkina, V. N. Nevedomskiy, E. V. Nikitina, A. Lazarenko, A. Yu. Egorov, M. V. Maksimov, È. I. Moiseev, A. E. Zhukov, “Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280  mathnet  elib; Semiconductors, 51:2 (2017), 267–271 4
4. E. V. Nikitina, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, T. N. Berezovskaya, “The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  97–102  mathnet  elib; Tech. Phys. Lett., 43:9 (2017), 863–865 1
2016
5. E. V. Nikitina, A. S. Gudovskikh, A. Lazarenko, E. V. Pirogov, M. S. Sobolev, K. S. Zelentsov, I. A. Morozov, A. Yu. Egorov, “GaAs/InGaAsN heterostructures for multi-junction solar cells”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667  mathnet  elib; Semiconductors, 50:5 (2016), 652–655 3
6. A. Lazarenko, E. V. Nikitina, E. V. Pirogov, M. S. Sobolev, A. Yu. Egorov, “The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19  mathnet  elib; Tech. Phys. Lett., 42:3 (2016), 284–286 3

Organisations
 
  Contact us:
 Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024