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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
V. A. Shvets, D. V. Marin, I. A. Azarov, M. V. Yakushev, S. V. Rykhlitskii, “In situ ellipsometric monitoring of composition and temperature of HgCdTe layers during their growth”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1240–1247 |
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2020 |
2. |
V. A. Shvets, D. V. Marin, V. G. Remesnik, I. A. Azarov, M. V. Yakushev, S. V. Rykhlitskii, “Parametric model of the optical constant spectra of Hg$_{1-x}$Cd$_{x}$Te and determination of the compound composition”, Optics and Spectroscopy, 128:12 (2020), 1815–1820 ; Optics and Spectroscopy, 128:12 (2020), 1948–1953 |
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3. |
K. N. Astankova, V. A. Volodin, I. A. Azarov, “Structure of germanium monoxide thin films”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1296–1301 ; Semiconductors, 54:12 (2020), 1555–1560 |
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2019 |
4. |
V. A. Shvets, I. A. Azarov, D. V. Marin, M. V. Yakushev, S. V. Rykhlitskii, “Ellipsometric method for measuring the CdTe buffer-layer temperature in the molecular-beam epitaxy of CdHgTe”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 137–142 ; Semiconductors, 53:1 (2019), 132–137 |
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2018 |
5. |
K. N. Astankova, A. S. Kozhukhov, I. A. Azarov, E. B. Gorokhov, D. V. Shcheglov, A. V. Latyshev, “Local anodic oxidation of thin GeO films and formation of nanostructures based on them”, Fizika Tverdogo Tela, 60:4 (2018), 696–700 ; Phys. Solid State, 60:4 (2018), 700–704 |
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6. |
E. B. Gorokhov, K. N. Astankova, I. A. Azarov, V. A. Volodin, A. V. Latyshev, “New method of porous Ge layer fabrication: structure and optical properties”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 517 ; Semiconductors, 52:5 (2018), 628–631 |
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2015 |
7. |
I. P. Rusinov, O. E. Tereshchenko, K. A. Kokh, A. R. Shakhmametova, I. A. Azarov, E. V. Chulkov, “Role of anisotropy and spin-orbit interaction in the optical and dielectric properties of BiTeI and BiTeCl compounds”, Pis'ma v Zh. Èksper. Teoret. Fiz., 101:8 (2015), 563–568 ; JETP Letters, 101:8 (2015), 507–512 |
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Organisations |
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