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Publications in Math-Net.Ru |
Citations |
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2024 |
1. |
K. V. Likhachev, A. M. Skomorokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovsky, M. E. Levinshteĭn, I. A. Eliseyev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov, “Локальная диагностика спиновых дефектов в облученных SiC-диодах Шоттки”, Pis'ma v Zh. Èksper. Teoret. Fiz., 120:5 (2024), 367–373 |
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2020 |
2. |
V. V. Kozlovsky, O. Korolkov, K. S. Davydovskaja, A. A. Lebedev, M. E. Levinshteĭn, N. Sleptsuk, A. M. Strel'chuk, J. Toompuu, “Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 35–37 ; Tech. Phys. Lett., 46:3 (2020), 287–289 |
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2019 |
3. |
A. A. Lebedev, M. E. Levinshteĭn, P. A. Ivanov, V. V. Kozlovsky, A. M. Strel'chuk, E. I. Shabunina, L. Fursin, “Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1604–1608 ; Semiconductors, 53:12 (2019), 1568–1572 |
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4. |
A. A. Lebedev, V. V. Kozlovsky, P. A. Ivanov, M. E. Levinshteĭn, A. V. Zubov, “Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1448–1452 ; Semiconductors, 53:10 (2019), 1409–1413 |
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5. |
O. M. Korolkov, V. V. Kozlovsky, A. A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang, “Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 991–994 ; Semiconductors, 53:7 (2019), 975–978 |
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6. |
V. A. Dobrov, V. V. Kozlovsky, A. V. Mescheryakov, V. G. Usychenko, A. S. Chernova, E. I. Shabunina, N. M. Shmidt, “Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 555–561 ; Semiconductors, 53:4 (2019), 545–551 |
3
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2018 |
7. |
A. M. Strel'chuk, V. V. Kozlovsky, A. A. Lebedev, “Radiation-induced damage of silicon-carbide diodes by high-energy particles”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1651–1655 ; Semiconductors, 52:13 (2018), 1758–1762 |
5
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8. |
V. V. Kozlovsky, A. A. Lebedev, K. S. Davydovskaja, Yu. V. Lubimova, “Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1532–1534 ; Semiconductors, 52:12 (2018), 1635–1637 |
9. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
3
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10. |
V. V. Kozlovsky, A. È. Vasil'ev, P. A. Karaseov, A. A. Lebedev, “Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers”, Fizika i Tekhnika Poluprovodnikov, 52:3 (2018), 327–332 ; Semiconductors, 52:3 (2018), 310–315 |
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2017 |
11. |
A. A. Lebedev, B. Ya. Ber, G. A. Oganesyan, S. V. Belov, S. P. Lebedev, I. P. Nikitina, N. V. Seredova, L. V. Shakhov, V. V. Kozlovsky, “Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1088–1090 ; Semiconductors, 51:8 (2017), 1044–1046 |
12. |
V. V. Kozlovsky, A. A. Lebedev, A. M. Strel'chuk, K. S. Davydovskaja, A. È. Vasil'ev, L. F. Makarenko, “Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 311–316 ; Semiconductors, 51:3 (2017), 299–304 |
3
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13. |
A. A. Lebedev, K. S. Davydovskaja, A. N. Yakimenko, A. M. Strel'chuk, V. V. Kozlovsky, “A study of the effect of electron and proton irradiation on 4$H$-SiC device structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 63–67 ; Tech. Phys. Lett., 43:11 (2017), 1027–1029 |
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2016 |
14. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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1985 |
15. |
V. N. Lomasov, V. V. Kozlovsky, N. V. Marutshak, “DIFFUSION OF THE SUBSTITUTION IMPURITY IN THE ION-IRRADIATED CRYSTAL”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2175–2178 |
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