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Publications in Math-Net.Ru |
Citations |
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1988 |
| 1. |
K. È. Avdzhyan, A. G. Aleksanyan, R. K. Kazaryan, L. A. Matevosyan, G. É. Mirzabekyan, “Laser deposition and optical investigation of thin Ga<sub><i>x</i></sub>In<sub>1–<i>x</i></sub>As<sub><i>y</i></sub>Sb<sub>1–<i>y</i></sub> films of various compositions”, Kvantovaya Elektronika, 15:1 (1988), 181–183  [Sov J Quantum Electron, 18:1 (1988), 117–119  ] |
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1985 |
| 2. |
A. G. Aleksanyan, “Influence of the eiectron–phonon interaction on an inverted population in a semiconductor superlattice and a semiconductor size-quantized film in a magnetic field”, Kvantovaya Elektronika, 12:4 (1985), 837–839 [Sov J Quantum Electron, 15:4 (1985), 544–545 ] |
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1984 |
| 3. |
Al. G. Alexanyan, A. G. Aleksanyan, G. É. Mirzabekyan, Yu. M. Popov, “Semiconductor laser utilizing transitions between size-quantization levels with separate electron and optical confinement”, Kvantovaya Elektronika, 11:9 (1984), 1885–1887 [Sov J Quantum Electron, 14:9 (1984), 1268–1269 ] |
| 4. |
K. È. Avdzhyan, A. G. Aleksanyan, N. Sh. Belluyan, R. K. Kazaryan, L. L. Matevosyan, “Quantum size effects in a periodic InSb–GaAs structure and in Ga<sub><i>x</i></sub>ln<sub>1–<i>x</i></sub>As<sub><i>y</i></sub>Sb<sub>1–<i>y</i></sub> films prepared by laser evaporation”, Kvantovaya Elektronika, 11:6 (1984), 1264–1266 [Sov J Quantum Electron, 14:6 (1984), 854–655 ] |
| 5. |
A. G. Aleksanyan, R. K. Kazaryan, A. M. Khachatryan, “Semiconductor laser made of Bi<sub>1–<i>x</i></sub>Sb<sub><i>x</i></sub>”, Kvantovaya Elektronika, 11:3 (1984), 492–496 [Sov J Quantum Electron, 14:3 (1984), 336–338 ] |
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1982 |
| 6. |
A. G. Aleksanyan, È. M. Belenov, I. N. Kompanets, Yu. M. Popov, I. A. Poluektov, A. G. Sobolev, A. V. Uskov, V. G. Tsukanov, “Generation of electromagnetic oscillations in metal–barrier–metal–barrier–metal structures”, Kvantovaya Elektronika, 9:8 (1982), 1700–1702 [Sov J Quantum Electron, 12:8 (1982), 1090–1092 ] |
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1981 |
| 7. |
A. G. Aleksanyan, È. M. Belenov, I. A. Poluektov, V. I. Romanenko, A. V. Uskov, “Feasibility of developing a tunable oscillator utilizing a system of metal–barrier–metal–barrier–metal junctions”, Kvantovaya Elektronika, 8:5 (1981), 1069–1072 [Sov J Quantum Electron, 11:5 (1981), 635–637 ] |
| 8. |
A. G. Aleksanyan, È. M. Belenov, I. A. Poluektov, V. I. Romanenko, A. V. Uskov, “Harmonic generation in metal–barrier–metal junctions”, Kvantovaya Elektronika, 8:2 (1981), 395–398 [Sov J Quantum Electron, 11:2 (1981), 237–239 ] |
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| 9. |
A. G. Aleksanyan, G. P. Boyakhchyan, “Semiconductor laser with transitions between magnetoacoustic subbands”, Kvantovaya Elektronika, 8:1 (1981), 185–188 [Sov J Quantum Electron, 11:1 (1981), 108–109 ] |
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1979 |
| 10. |
A. G. Aleksanyan, G. P. Boyakhchyan, E. G. Mirzabekyan, “Gain of electromagnetic radiation traveling in a semiconductor subjected to magnetic and ultrasonic fields”, Kvantovaya Elektronika, 6:8 (1979), 1786–1789 [Sov J Quantum Electron, 9:8 (1979), 1053–1054] |
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1975 |
| 11. |
A. G. Aleksanyan, R. G. Allakhverdyan, Al. G. Aleksanyan, “Semiconductor laser utilizing intraband transitions between magnetic-film levels”, Kvantovaya Elektronika, 2:8 (1975), 1648–1653 [Sov J Quantum Electron, 5:8 (1975), 891–894] |
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1974 |
| 12. |
A. G. Aleksanyan, “Spectral dependence of negative photoconductivity”, Kvantovaya Elektronika, 1:8 (1974), 1693–1699 [Sov J Quantum Electron, 4:8 (1975), 933–938] |
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| 13. |
A. G. Aleksanyan, I. A. Poluéktov, Yu. M. Popov, “Theory of the gain of semiconductor lasers”, Kvantovaya Elektronika, 1:1 (1974), 62–68 [Sov J Quantum Electron, 4:1 (1974), 32–35] |
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1973 |
| 14. |
A. G. Aleksanyan, I. A. Poluèktov, Yu. M. Popov, “Calculation of the quasi-Fermi levels and characteristics of spontaneous emission from heavily doped semiconductors”, Kvantovaya Elektronika, 1973, no. 5(17), 117–119 [Sov J Quantum Electron, 3:5 (1974), 435–436] |
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1972 |
| 15. |
A. G. Aleksanyan, I. A. Poluèktov, Yu. M. Popov, “Optical gain of heavily doped semiconductors”, Kvantovaya Elektronika, 1972, no. 2(8), 77–83 [Sov J Quantum Electron, 2:2 (1972), 150–154] |
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1971 |
| 16. |
A. G. Aleksanyan, I. A. Poluèktov, Yu. M. Popov, “Influence of impurity concentration on the threshold characteristics of semiconductor lasers”, Kvantovaya Elektronika, 1971, no. 3, 15–22 [Sov J Quantum Electron, 1:3 (1971), 213–218] |
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