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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor laser made of Bi1–xSbx
A. G. Aleksanyan, R. K. Kazaryan, A. M. Khachatryan
Abstract:
An experimental study was made of the emission of radiation of wavelengths near 100 μ by a laser made of Вi1–xSbx. Theoretical estimates were obtained of the threshold density n of electronhole pairs. It was found that lasing appeared at n ≈ 4 × 1015 cm–3 when the temperature was 16K and the current 1.4 A.
Received: 15.04.1983
Citation:
A. G. Aleksanyan, R. K. Kazaryan, A. M. Khachatryan, “Semiconductor laser made of Bi1–xSbx”, Kvantovaya Elektronika, 11:3 (1984), 492–496 [Sov J Quantum Electron, 14:3 (1984), 336–338]
Linking options:
https://www.mathnet.ru/eng/qe4896 https://www.mathnet.ru/eng/qe/v11/i3/p492
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Abstract page: | 111 | Full-text PDF : | 63 | First page: | 1 |
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