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Kvantovaya Elektronika, 1984, Volume 11, Number 3, Pages 492–496 (Mi qe4896)  
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor laser made of Bi1–xSbx

A. G. Aleksanyan, R. K. Kazaryan, A. M. Khachatryan
Full-text PDF (893 kB) Citations (6)
Abstract: An experimental study was made of the emission of radiation of wavelengths near 100 μ by a laser made of Вi1–xSbx. Theoretical estimates were obtained of the threshold density n of electronhole pairs. It was found that lasing appeared at n ≈ 4 × 1015 cm–3 when the temperature was 16K and the current 1.4 A.
Received: 15.04.1983
English version:
Soviet Journal of Quantum Electronics, 1984, Volume 14, Issue 3, Pages 336–338
DOI: https://doi.org/10.1070/QE1984v014n03ABEH004896
Bibliographic databases:
Document Type: Article
UDC: 621.373.826.038.825.4
PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq, 42.60.Lh
Language: Russian


Citation: A. G. Aleksanyan, R. K. Kazaryan, A. M. Khachatryan, “Semiconductor laser made of Bi1–xSbx”, Kvantovaya Elektronika, 11:3 (1984), 492–496 [Sov J Quantum Electron, 14:3 (1984), 336–338]
Linking options:
  • https://www.mathnet.ru/eng/qe4896
  • https://www.mathnet.ru/eng/qe/v11/i3/p492
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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