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Publications in Math-Net.Ru |
Citations |
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2023 |
| 1. |
Nikita A. Leonov, Daniil A. Kozlov, Demid A. Kirilenko, Nikolay A. Bert, Anna O. Pelageikina, Andrey A. Nechitailov, Mikhail B. Alikin, Andrei A. Krasilin, “Formation of a 10$\mathring{\mathrm{A}}$ phase with halloysite structure under hydrothermal conditions with varying initial chemical composition”, Nanosystems: Physics, Chemistry, Mathematics, 14:2 (2023), 264–271   |
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2021 |
| 2. |
M. V. Baidakova, N. A. Bert, V. Yu. Davydov, A. V. Ershov, A. A. Levin, A. N. Smirnov, L. A. Sokura, O. M. Sreseli, I. N. Yassievich, “Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 882–889 |
| 3. |
I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788 ; Semiconductors, 55:10 (2021), 795–798 |
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2020 |
| 4. |
O. M. Sreseli, M. A. Elistratova, D. N. Goryachev, E. V. Beregulin, V. N. Nevedomskiy, N. A. Bert, A. V. Ershov, “Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1112–1116 ; Semiconductors, 54:10 (2020), 1315–1319 |
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| 5. |
O. M. Sreseli, N. A. Bert, V. N. Nevedomskiy, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonskii, “Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137 ; Semiconductors, 54:2 (2020), 181–189 |
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2018 |
| 6. |
I. P. Soshnikov, K. P. Kotlyar, N. A. Bert, D. A. Kirilenko, A. D. Bouravlev, G. E. Cirlin, “The features of GaAs nanowire SEM images”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 510 ; Semiconductors, 52:5 (2018), 605–608 |
| 7. |
Ya. V. Lubyanskiy, A. D. Bondarev, I. P. Sotnikov, N. A. Bert, V. V. Zolotarev, D. A. Kirilenko, K. P. Kotlyar, N. A. Pikhtin, I. S. Tarasov, “Oxygen nitrogen mixture effect on aluminum nitride synthesis by reactive ion plasma deposition”, Fizika i Tekhnika Poluprovodnikov, 52:2 (2018), 196–200 ; Semiconductors, 52:2 (2018), 184–188 |
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2017 |
| 8. |
L. A. Sokura, Ya. A. Parkhomenko, K. D. Moiseev, V. N. Nevedomskiy, N. A. Bert, “InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1146–1150 ; Semiconductors, 51:8 (2017), 1101–1105 |
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2016 |
| 9. |
R. V. Levin, V. N. Nevedomskiy, B. V. Pushnii, N. A. Bert, M. N. Mizerov, “InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 79–84 ; Tech. Phys. Lett., 42:1 (2016), 96–98 |
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2013 |
| 10. |
A. V. Emelyanov, E. A. Konstantinova, P. A. Forsh, A. G. Kazanskii, M. V. Khenkin, N. N. Petrova, E. I. Terukov, D. A. Kirilenko, N. A. Bert, S. G. Konnikov, P. K. Kashkarov, “Features of the structure and defect states in hydrogenated polymorphous silicon films”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013), 536–540 ; JETP Letters, 97:8 (2013), 466–469   |
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1985 |
| 11. |
N. A. Bert, V. I. Vasil'ev, S. G. Konnikov, V. I. Kuchinskii, A. S. Lazutka, V. A. Mishurnii, E. L. Portnoĭ, “Non-conformity of lattice periods and the intensity of photoluminescence in $Ga\,In\,Sb\,As/Ga\,Sb$ heterocompositions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985), 193–197 |
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