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Publications in Math-Net.Ru |
Citations |
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2019 |
| 1. |
G. Yu. Vasil'eva, D. Smirnov, Yu. B. Vasil'ev, A. A. Greshnov, R. J. Haug, “Edge doping in graphene devices on SiO$_{2}$ substrates”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1681–1685   ; Semiconductors, 53:12 (2019), 1672–1676 |
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| 2. |
G. Yu. Vasil'eva, A. A. Greshnov, Yu. B. Vasil'ev, N. N. Mikhailov, A. A. Usikova, R. J. Haug, “Magnetotransport spectroscopy of the interface, quantum well, and hybrid states in structures with 16-nm-thick multiple HgTe layers”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 947–952 ; Semiconductors, 53:7 (2019), 930–935 |
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2018 |
| 3. |
G. Yu. Vasil'eva, Yu. B. Vasil'ev, S. N. Novikov, S. N. Danilov, S. D. Ganichev, “On the fabrication of graphene $p$–$n$ junctions and their application for detecting terahertz radiation”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 949–953 ; Semiconductors, 52:8 (2018), 1077–1081 |
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2016 |
| 4. |
Yu. B. Vasil'ev, N. N. Mikhailov, G. Yu. Vasil'eva, Yu. L. Ivanov, A. O. Zahar'in, A. V. Andrianov, L. E. Vorob'ev, D. A. Firsov, M. N. Grigor'ev, A. V. Antonov, A. V. Ikonnikov, V. I. Gavrilenko, “Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 932–936 ; Semiconductors, 50:7 (2016), 915–919 |
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2013 |
| 5. |
A. A. Greshnov, Yu. B. Vasil'ev, N. N. Mikhailov, G. Yu. Vasil'eva, D. Smirnov, “Manifestation of a semimetallic state in cyclotron resonance in low-symmetry HgTe-based quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 97:2 (2013), 108–113 ; JETP Letters, 97:2 (2013), 102–106   |
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2012 |
| 6. |
G. Yu. Vasil'eva, P. S. Alekseev, Yu. L. Ivanov, Yu. B. Vasil'ev, D. Smirnov, H. Shmidt, R. J. Haug, F. Gouider, G. Nachtwei, “Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:7 (2012), 519–522 ; JETP Letters, 96:7 (2012), 471–474 |
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