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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 7, Pages 519–522 (Mi jetpl3250)  
This article is cited in 7 scientific papers (total in 7 papers)

CONDENSED MATTER

Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering

G. Yu. Vasil'evaa, P. S. Alekseeva, Yu. L. Ivanova, Yu. B. Vasil'eva, D. Smirnovb, H. Shmidtb, R. J. Haugb, F. Gouiderc, G. Nachtweic

a Ioffe Physico-Technical Institute, Russian Academy of Sciences
b Institut fur Festk\"{o}rperphysik, Universit\"{a}t Hannover
c Institut f\"{u}r Angewandte Physik, Technische Universitat Braunschweig
Full-text PDF (414 kB) Citations (7)
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Abstract: The magnetoresistance of single-layer graphene on a Si/SiO$_2$ substrate is measured in the temperature range of $2.5$–$150$ K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
Received: 29.08.2012
English version:
Journal of Experimental and Theoretical Physics Letters, 2012, Volume 96, Issue 7, Pages 471–474
DOI: https://doi.org/10.1134/S0021364012190137
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. Yu. Vasil'eva, P. S. Alekseev, Yu. L. Ivanov, Yu. B. Vasil'ev, D. Smirnov, H. Shmidt, R. J. Haug, F. Gouider, G. Nachtwei, “Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:7 (2012), 519–522; JETP Letters, 96:7 (2012), 471–474
Citation in format AMSBIB
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\pages 519--522
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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