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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 96, Issue 7, Pages 519–522
(Mi jetpl3250)
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This article is cited in 7 scientific papers (total in 7 papers)
CONDENSED MATTER
Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering
G. Yu. Vasil'evaa, P. S. Alekseeva, Yu. L. Ivanova, Yu. B. Vasil'eva, D. Smirnovb, H. Shmidtb, R. J. Haugb, F. Gouiderc, G. Nachtweic a Ioffe Physico-Technical Institute, Russian Academy of Sciences
b Institut fur Festk\"{o}rperphysik, Universit\"{a}t Hannover
c Institut f\"{u}r Angewandte Physik, Technische Universitat Braunschweig
Abstract:
The magnetoresistance of single-layer graphene on a Si/SiO$_2$ substrate is measured in the temperature range of $2.5$–$150$ K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.
Received: 29.08.2012
Citation:
G. Yu. Vasil'eva, P. S. Alekseev, Yu. L. Ivanov, Yu. B. Vasil'ev, D. Smirnov, H. Shmidt, R. J. Haug, F. Gouider, G. Nachtwei, “Magnetoresistance of single-layer graphene under the conditions of short-range potential scattering”, Pis'ma v Zh. Èksper. Teoret. Fiz., 96:7 (2012), 519–522; JETP Letters, 96:7 (2012), 471–474
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https://www.mathnet.ru/eng/jetpl3250 https://www.mathnet.ru/eng/jetpl/v96/i7/p519
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