Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 932–936 (Mi phts6415)  

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

Yu. B. Vasil'eva, N. N. Mikhailovbc, G. Yu. Vasil'evaad, Yu. L. Ivanova, A. O. Zahar'ina, A. V. Andrianova, L. E. Vorob'evd, D. A. Firsovd, M. N. Grigor'eve, A. V. Antonovf, A. V. Ikonnikovf, V. I. Gavrilenkof

a Ioffe Institute, St. Petersburg
b Novosibirsk State University
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Peter the Great St. Petersburg Polytechnic University
e Baltic State Technical University, St. Petersburg
f Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (226 kB) Citations (2)
Abstract: The terahertz electroluminescence from Cd$_{0.7}$Hg$_{0.3}$Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.
Received: 16.12.2015
Accepted: 23.12.2015
English version:
Semiconductors, 2016, Volume 50, Issue 7, Pages 915–919
DOI: https://doi.org/10.1134/S1063782616070253
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. B. Vasil'ev, N. N. Mikhailov, G. Yu. Vasil'eva, Yu. L. Ivanov, A. O. Zahar'in, A. V. Andrianov, L. E. Vorob'ev, D. A. Firsov, M. N. Grigor'ev, A. V. Antonov, A. V. Ikonnikov, V. I. Gavrilenko, “Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 932–936; Semiconductors, 50:7 (2016), 915–919
Citation in format AMSBIB
\Bibitem{VasMikVas16}
\by Yu.~B.~Vasil'ev, N.~N.~Mikhailov, G.~Yu.~Vasil'eva, Yu.~L.~Ivanov, A.~O.~Zahar'in, A.~V.~Andrianov, L.~E.~Vorob'ev, D.~A.~Firsov, M.~N.~Grigor'ev, A.~V.~Antonov, A.~V.~Ikonnikov, V.~I.~Gavrilenko
\paper Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 7
\pages 932--936
\mathnet{http://mi.mathnet.ru/phts6415}
\elib{https://elibrary.ru/item.asp?id=27368938}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 7
\pages 915--919
\crossref{https://doi.org/10.1134/S1063782616070253}
Linking options:
  • https://www.mathnet.ru/eng/phts6415
  • https://www.mathnet.ru/eng/phts/v50/i7/p932
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:37
    Full-text PDF :12
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024