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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 932–936
(Mi phts6415)
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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
Yu. B. Vasil'eva, N. N. Mikhailovbc, G. Yu. Vasil'evaad, Yu. L. Ivanova, A. O. Zahar'ina, A. V. Andrianova, L. E. Vorob'evd, D. A. Firsovd, M. N. Grigor'eve, A. V. Antonovf, A. V. Ikonnikovf, V. I. Gavrilenkof a Ioffe Institute, St. Petersburg
b Novosibirsk State University
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Peter the Great St. Petersburg Polytechnic University
e Baltic State Technical University, St. Petersburg
f Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The terahertz electroluminescence from Cd$_{0.7}$Hg$_{0.3}$Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.
Received: 16.12.2015 Accepted: 23.12.2015
Citation:
Yu. B. Vasil'ev, N. N. Mikhailov, G. Yu. Vasil'eva, Yu. L. Ivanov, A. O. Zahar'in, A. V. Andrianov, L. E. Vorob'ev, D. A. Firsov, M. N. Grigor'ev, A. V. Antonov, A. V. Ikonnikov, V. I. Gavrilenko, “Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 932–936; Semiconductors, 50:7 (2016), 915–919
Linking options:
https://www.mathnet.ru/eng/phts6415 https://www.mathnet.ru/eng/phts/v50/i7/p932
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