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Publications in Math-Net.Ru |
Citations |
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2020 |
| 1. |
N. M. Shmidt, E. I. Shabunina, A. E. Chernyakov, A. E. Ivanov, N. А. Talnishnikh, A. L. Zakhgeim, “Temperature-dependent decrease in efficiency in power blue InGaN/GaN LEDs”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 45–48   ; Tech. Phys. Lett., 46:12 (2020), 1253–1256 |
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2019 |
| 2. |
V. A. Dobrov, V. V. Kozlovsky, A. V. Mescheryakov, V. G. Usychenko, A. S. Chernova, E. I. Shabunina, N. M. Shmidt, “Effect of electron irradiation with an energy of 0.9 MeV on the I–V characteristics and low-frequency noise in 4$H$-SiC pin diodes”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 555–561 ; Semiconductors, 53:4 (2019), 545–551 |
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2018 |
| 3. |
V. V. Emtsev, E. V. Gushchina, V. N. Petrov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, A. P. Kartashova, A. A. Zybin, V. V. Kozlovsky, M. F. Kudoyarov, A. V. Sakharov, G. A. Oganesyan, D. S. Poloskin, V. V. Lundin, “Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system”, Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 804–811 ; Semiconductors, 52:7 (2018), 942–949 |
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| 4. |
N. A. Sobolev, B. Ya. Ber, D. Yu. Kazantsev, A. E. Kalyadin, K. V. Karabeshkin, V. M. Mikushkin, V. I. Sakharov, I. T. Serenkov, E. I. Shek, E. V. Sherstnev, N. M. Shmidt, “The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50 ; Tech. Phys. Lett., 44:7 (2018), 574–576 |
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2017 |
| 5. |
A. E. Marichev, R. V. Levin, A. B. Gordeeva, G. S. Gagis, V. I. Kuchinskii, B. V. Pushnii, N. D. Prasolov, N. M. Shmidt, “Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:2 (2017), 3–9 ; Tech. Phys. Lett., 43:1 (2017), 88–91 |
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2016 |
| 6. |
V. N. Petrov, V. G. Sidorov, N. A. Talnishnikh, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, A. S. Usikov, H. Helava, Yu. N. Makarov, “On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1195–1201 ; Semiconductors, 50:9 (2016), 1173–1179 |
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| 7. |
V. V. Emtsev, E. E. Zavarin, M. A. Kozlovskii, M. F. Kudoyarov, V. V. Lundin, G. A. Oganesyan, V. N. Petrov, D. S. Poloskin, A. V. Sakharov, S. I. Troshkov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, V. V. Kozlovsky, “Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016), 39–46 ; Tech. Phys. Lett., 42:11 (2016), 1079–1082 |
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| 8. |
V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, “The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016), 80–86 ; Tech. Phys. Lett., 42:7 (2016), 701–703 |
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| 9. |
N. V. Kuznetsova, D. V. Nechaev, N. M. Shmidt, S. Yu. Karpov, N. V. Rzheutskii, V. E. Zemlyakov, V. Kh. Kaibyshev, D. Yu. Kazantsev, S. I. Troshkov, V. I. Egorkin, B. Ya. Ber, E. V. Lutsenko, S. V. Ivanov, V. N. Zhmerik, “Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016), 57–63 ; Tech. Phys. Lett., 42:6 (2016), 635–638 |
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2003 |
| 10. |
I. V. Afanas'ev, G. V. Benemanskaya, V. S. Vikhnin, G. É. Frank-Kamenetskaya, N. M. Shmidt, “Oscillations in the threshold photoemission spectra of GaN(0001) with submonolayer Cs coverages”, Pis'ma v Zh. Èksper. Teoret. Fiz., 77:5 (2003), 270–274 ; JETP Letters, 77:5 (2003), 226–229  |
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2001 |
| 11. |
I. L. Krestnikov, V. V. Lundin, A. V. Sakharov, D. A. Bedarev, E. E. Zavarin, Yu. G. Musikhin, N. M. Shmidt, A. F. Tsatsul'nikov, A. S. Usikov, N. N. Ledentsov, Zh. I. Alferov, “Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices”, UFN, 171:8 (2001), 857–858 ; Phys. Usp., 44:8 (2001), 815–816 |
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1992 |
| 12. |
S. V. Belyakov, L. A. Busygina, A. T. Gorelenok, A. V. Kamanin, V. A. Kukatov, A. V. Merkulov, I. A. Mokina, N. M. Shmidt, T. A. Yure, “ZN DIFFUSION IN INP AND ZN-BASED SOLID-SOLUTIONS FROM POLYMER FILM
DIFFUSANTS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:13 (1992), 35–38 |
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1990 |
| 13. |
M. V. Belousov, A. T. Gorelenok, V. Yu. Davydov, R. V. Karzhavin, I. A. Mokina, N. M. Shmidt, I. Yu. Yakimenko, “Исследование влияния химической обработки InP на скорость
поверхностной рекомбинации методом комбинационного
рассеяния света”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2177–2180 |
| 14. |
A. Deringas, Z. Dobrovolskis, A. T. Gorelenok, I. A. Mokina, N. M. Shmidt, “Исследование кинетики фотопроводимости в коротких фоторезисторах на
основе InP : Fe”, Fizika i Tekhnika Poluprovodnikov, 24:12 (1990), 2167–2171 |
| 15. |
V. Balynas, A. T. Gorelenok, A. Krotkus, A. Stalnenis, N. M. Shmidt, “Измерение ВАХ InGaAs при помощи пикосекундной электрооптической
стробирующей установки”, Fizika i Tekhnika Poluprovodnikov, 24:5 (1990), 848–854 |
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1988 |
| 16. |
Z. I. Alferov, V. I. Bosyi, A. T. Gorelenok, A. V. Ivashchuk, N. D. Il'inskaya, M. N. Mizerov, I. A. Mokina, D. N. Rehviashvili, N. M. Shmidt, “SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988), 1807–1810 |
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1987 |
| 17. |
A. T. Gorelenok, V. V. Mamutin, D. V. Pulyaevskii, D. N. Rehviashvili, N. M. Shmidt, “Study of Minority-Carrier Lifetime in the Narrow-Band Region of Diode InGaAsP/InP Structures”, Fizika i Tekhnika Poluprovodnikov, 21:8 (1987), 1498–1501 |
| 18. |
E. Adomaitis, Z. Dobrovolskis, A. T. Gorelenok, M. Ignatavichus, V. I. Korol'kov, A. Krotkus, V. Potsyunas, N. M. Shmidt, “Removal of a Nonequilibrium Plasma from Short InP : Fe Photoresistors by an Electric Field”, Fizika i Tekhnika Poluprovodnikov, 21:1 (1987), 70–74 |
| 19. |
L. A. Volkov, A. T. Gorelenok, V. N. Luk'yanov, I. A. Rachkov, D. N. Rehviashvili, N. M. Shmidt, S. D. Yakubovich, “Determination of AFC of fast-response photodetectors using the homodyne glass-fiber diagram of optical signal amplitude pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1059–1062 |
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1985 |
| 20. |
N. T. Bagraev, V. A. Mashkov, R. P. Seisyan, V. L. Sukhanov, N. M. Shmidt, “FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF
OBTAINING PLANAR SILICON P-N-JUNCTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2064–2066 |
| 21. |
V. M. Andreev, A. T. Gorelenok, V. G. Gruzdov, V. G. Danl'chenko, N. D. Il'inskaya, V. I. Korol'kov, N. M. Saradzhishvili, L. M. Fedorov, N. M. Shmidt, M. S. Bogbanovich, N. Z. Djingarev, L. B. Karlina, V. V. Mamutin, I. A. Mokina, “INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP”, Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985), 1566–1569 |
| 22. |
V. M. Andreev, A. T. Gorelenok, M. Z. Zhingarev, L. E. Klyachkin, V. V. Mamutin, N. M. Saradzhishvili, B. I. Skopina, O. V. Sulima, N. M. Shmidt, “Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP”, Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 668–673 |
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1984 |
| 23. |
A. T. Gorelenok, V. G. Gruzdov, V. G. Danl'chenko, N. D. Il'inskaya, V. I. Korol'kov, V. V. Mamutin, I. A. Mokina, N. M. Saradzhishvili, T. S. Tabarov, N. M. Shmidt, “PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP
SYSTEM”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984), 1294–1297 |
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1983 |
| 24. |
Z. I. Alferov, A. T. Gorelenok, V. G. Danl'chenko, A. V. Kamanin, V. I. Korol'kov, V. V. Mamutin, T. S. Tabarov, N. M. Shmidt, “Высокоэффективный фотодетектор
для ультрафиолетового излучения”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:24 (1983), 1516–1519 |
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