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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
M. V. Baidakova, N. A. Bert, V. Yu. Davydov, A. V. Ershov, A. A. Levin, A. N. Smirnov, L. A. Sokura, O. M. Sreseli, I. N. Yassievich, “Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers”, Fizika i Tekhnika Poluprovodnikov, 55:10 (2021), 882–889   |
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2020 |
| 2. |
O. M. Sreseli, M. A. Elistratova, D. N. Goryachev, E. V. Beregulin, V. N. Nevedomskiy, N. A. Bert, A. V. Ershov, “Electrical and photoelectric properties of $\alpha$-Si/SiO$_{2}$ and $\alpha$-Ge/SiO$_{2}$ multilayer nanostructures on $p$-Si substrates annealed at various temperatures”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1112–1116 ; Semiconductors, 54:10 (2020), 1315–1319 |
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| 3. |
O. M. Sreseli, N. A. Bert, V. N. Nevedomskiy, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonskii, “Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:2 (2020), 129–137 ; Semiconductors, 54:2 (2020), 181–189 |
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2019 |
| 4. |
M. A. Elistratova, I. B. Zakharova, G. V. Li, R. M. Dubrovin, O. M. Sreseli, “The effect of crystallization conditions on the spectral characteristics of tetraphenylporphyrin thin films”, Fizika i Tekhnika Poluprovodnikov, 53:1 (2019), 55–58 ; Semiconductors, 53:1 (2019), 51–54 |
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2018 |
| 5. |
M. P. Teplyakov, O. S. Ken, D. N. Goryachev, O. M. Sreseli, “Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1071–1075 ; Semiconductors, 52:9 (2018), 1193–1197 |
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| 6. |
M. A. Elistratova, D. S. Poloskin, D. N. Goryachev, I. B. Zakharova, O. M. Sreseli, “Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 921–925 ; Semiconductors, 52:8 (2018), 1051–1055 |
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| 7. |
M. M. Sobolev, O. S. Ken, O. M. Sreseli, D. A. Yavsin, S. A. Gurevich, “Spatial and quantum confinement of Si nanoparticles deposited by laser electrodispersion onto crystalline Si”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018), 30–38 ; Tech. Phys. Lett., 44:4 (2018), 287–290 |
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2017 |
| 8. |
M. A. Elistratova, N. M. Romanov, D. N. Goryachev, I. B. Zakharova, O. M. Sreseli, “Effect of gamma irradiation on the photoluminescence of porous silicon”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 507–511 ; Semiconductors, 51:4 (2017), 483–487 |
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2016 |
| 9. |
O. S. Ken, V. S. Levitskii, D. A. Yavsin, S. A. Gurevich, V. Yu. Davydov, O. M. Sreseli, “Optical and structural properties of composite Si:Au layers formed by laser electrodispersion”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 423–430 ; Semiconductors, 50:3 (2016), 418–425 |
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2011 |
| 10. |
O. B. Gusev, J. S. Vainshtein, Yu. K. Undalov, O. S. Yeltsina, I. N. Trapeznikova, E. I. Terukov, O. M. Sreseli, “Luminescence of amorphous silicon nanoclusters”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011), 402–405 ; JETP Letters, 94:5 (2011), 370–373   |
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2001 |
| 11. |
N. N. Zinov'ev, A. V. Andrianov, V. Yu. Nekrasov, V. A. Petrovskii, L. V. Belyakov, O. M. Sreseli, G. Hill, J. M. Chamberlain, “Terahertz injection electroluminescence in multiperiod quantum-cascade AlGaAs/GaAs structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 74:2 (2001), 105–107 ; JETP Letters, 74:2 (2001), 100–102 |
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1991 |
| 12. |
L. V. Belyakov, V. I. Vaksman, D. N. Goryachev, A. V. Kats, B. L. Rumyantsev, I. S. Spevak, O. M. Sreseli, “RESONANCE EFFECTS CAUSED BY SEW UNDER ALMOST NORMAL INCIDENCE OF
LIGHT-BEAM ON SINUSOIDAL SURFACE”, Zhurnal Tekhnicheskoi Fiziki, 61:6 (1991), 100–105 |
| 13. |
L. V. Belyakov, O. M. Sreseli, “Поверхностные электромагнитные волны и фотоприемники
(обзор)”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1281–1296 |
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1990 |
| 14. |
L. V. Belyakov, D. N. Goryachev, B. D. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “NARROW-BAND SELECTIVE PHOTODETECTORS BASED ON THE SCHOTTKY STRUCTURE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:6 (1990), 72–75 |
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1989 |
| 15. |
L. V. Belyakov, D. N. Goryachev, T. L. Makarova, B. L. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Влияние тонкого диэлектрического слоя на свойства ПЭВ на границе
металл$-$полупроводник”, Fizika i Tekhnika Poluprovodnikov, 23:11 (1989), 1966–1970 |
| 16. |
L. V. Belyakov, D. N. Goryachev, B. L. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Резонансные явления в структурах Шоттки при возбуждении
«медленных» поверхностных электромагнитных волн”, Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 461–465 |
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1988 |
| 17. |
L. V. Belyakov, N. N. Gorobei, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Влияние распределения поля поверхностного поляритона в системе
диэлектрик–металл–полупроводник на фотоответ полупроводника”, Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 906–910 |
| 18. |
L. V. Belyakov, D. N. Goryachev, B. L. Rumyantsev, O. M. Sreseli, I. D. Yaroshetskiĭ, “RESONANCE ELECTROLUMINESCENCE STRUCTURE OF METAL-SUPERCONDUCTOR WITH THE
CORRUGATE SURFACE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:8 (1988), 757–760 |
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1987 |
| 19. |
L. V. Belyakov, D. N. Goryachev, V. I. Emel'yanov, V. N. Seminogov, O. M. Sreseli, I. D. Yaroshetskiĭ, “Resonance quenching the mirror reflection under the excitation of surface electromagnetic-waves on nonmetallic periodic structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987), 693–697 |
| 20. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Photoresponse of the metal–semiconductor structure under the excitation of surface-polaritons by the TE-polarization light”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:5 (1987), 261–265 |
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1986 |
| 21. |
L. V. Belyakov, D. N. Goryachev, A. V. Sachenko, O. M. Sreseli, “Anomalous Photoeffect on the Cuprous Oxide – Electrolyte Interface”, Fizika i Tekhnika Poluprovodnikov, 20:5 (1986), 876–880 |
| 22. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Influence of optical-constants of semiconductors on the location of a polariton peak of the Schottky diode photoresponse”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986), 1145–1149 |
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1985 |
| 23. |
E. N. Arutunov, L. V. Belyakov, A. N. Vasil'ev, D. N. Goryachev, Yu. V. Koval'chuk, V. E. Myachin, I. A. Sokolov, O. M. Sreseli, “INVESTIGATION OF GAAS FUSION PECULIARITIES UNDER 2-LONG-WAVE LASER
ANNEALING”, Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985), 2144–2148 |
| 24. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, I. D. Yaroshetskiĭ, “Photoresponse of the semiconductor-metal structure related to excitation of surface-polaritons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985), 1162–1165 |
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1984 |
| 25. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, “Photoelectrochemical Study of Optical Transitions in Semiconductors”, Fizika i Tekhnika Poluprovodnikov, 18:4 (1984), 752–755 |
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1983 |
| 26. |
L. V. Belyakov, D. N. Goryachev, O. M. Sreseli, “Запись голограмм на металле методом фотохимического травления”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:8 (1983), 471–474 |
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