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This article is cited in 3 scientific papers (total in 3 papers)
Micro- and nanocrystalline, porous, composite semiconductors
Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si
M. P. Teplyakova, O. S. Kenb, D. N. Goryachevb, O. M. Sreselib a Peter the Great St. Petersburg Polytechnic University
b Ioffe Institute, St. Petersburg
Abstract:
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with $p$-type conductivity are investigated. The current transfer mechanisms in the structures and their influence on the photosensitivity of structures with different amounts of gold in the composite layer are determined.
Keywords:
Composite Layer, Current Transfer Mechanism, Laser Electrodispersion, Photosensitivity Spectra, Silicon Nanoparticles.
Received: 26.02.2018 Accepted: 12.03.2018
Citation:
M. P. Teplyakov, O. S. Ken, D. N. Goryachev, O. M. Sreseli, “Transport and photosensitivity in structures: a composite layer of silicon and gold nanoparticles on $p$-Si”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1071–1075; Semiconductors, 52:9 (2018), 1193–1197
Linking options:
https://www.mathnet.ru/eng/phts5741 https://www.mathnet.ru/eng/phts/v52/i9/p1071
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